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Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AO3416 Datasheet Preview

AO3416 Datasheet

20V N-Channel MOSFET

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AO3416 pdf
AO3416
20V N-Channel MOSFET
General Description
Product Summary
The AO3416 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as
a load switch or in PWM applications. It is ESD
protected.
VDS
ID (at VGS=4.5V)
RDS(ON) (at VGS=4.5V)
RDS(ON) (at VGS = 2.5V)
RDS(ON) (at VGS = 1.8V)
ESD protected
20V
6.5A
< 22m
< 26m
< 34m
SOT23
Top View
Bottom View
D
D
D
SG
GS
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
ID
IDM
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
G
S
Maximum
20
±8
6.5
5.2
30
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
70
100
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev 5: July 2010
www.aosmd.com
Page 1 of 5
Free Datasheet http://www.datasheet4u.com/



Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AO3416 Datasheet Preview

AO3416 Datasheet

20V N-Channel MOSFET

No Preview Available !

AO3416 pdf
AO3416
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
20
V
IDSS Zero Gate Voltage Drain Current
VDS=20V, VGS=0V
TJ=55°C
1
µA
5
IGSS Gate-Body leakage current
VDS=0V, VGS= ±8V
±10 µA
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
0.4 0.7 1.1
V
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
30
A
RDS(ON) Static Drain-Source On-Resistance
VGS=4.5V, ID=6.5A
VGS=2.5V, ID=5.5A
TJ=125°C
16 22
m
22 30
18 26 m
VGS=1.8V, ID=5A
21 34 m
gFS Forward Transconductance
VDS=5V, ID=6.5A
50 S
VSD Diode Forward Voltage
IS=1A,VGS=0V
0.62 1
V
IS Maximum Body-Diode Continuous Current
2A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1295
160
87
1.8
1650
pF
pF
pF
K
SWITCHING PARAMETERS
Qg Total Gate Charge
10 nC
Qgs Gate Source Charge
VGS=4.5V, VDS=10V, ID=6.5A
4.2 nC
Qgd Gate Drain Charge
2.6 nC
tD(on)
Turn-On DelayTime
280 ns
tr Turn-On Rise Time
VGS=4.5V, VDS=10V, RL=1.54,
328
ns
tD(off)
Turn-Off DelayTime
RGEN=3
3.76 us
tf Turn-Off Fall Time
2.24 us
trr Body Diode Reverse Recovery Time IF=6.5A, dI/dt=100A/µs
31 41 ns
Qrr Body Diode Reverse Recovery Charge IF=6.5A, dI/dt=100A/µs
6.8 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 5: July 2010
www.aosmd.com
Page 2 of 5
Free Datasheet http://www.datasheet4u.com/


Part Number AO3416
Description 20V N-Channel MOSFET
Maker Alpha & Omega Semiconductors
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