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Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AO4455 Datasheet Preview

AO4455 Datasheet

30V P-Channel MOSFET

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AO4455 pdf
AO4455
30V P-Channel MOSFET
General Description
The AO4455 uses advanced trench technology to provide
excellent RDS(ON), and ultra-low low gate charge with a
25V gate rating. This device is suitable for use as a load
switch or in PWM applications.
Product Summary
VDS (V) = -30V
ID = -17A
RDS(ON) < 6.2m
RDS(ON) < 7.2m
(VGS = -20V)
(VGS = -20V)
(VGS = -10V)
* RoHS and Halogen-Free Complaint
ESD Protected
100% UIS tested
100% Rg tested
Top View
D
D
D
D
SOIC-8
Bottom View
G
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current AF
TA=70°C
Pulsed Drain Current B
ID
IDM
Power Dissipation A
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient AF
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
G
Maximum
-30
±25
-17
-14
-182
3.1
2
-55 to 150
Typ
26
50
14
D
S
Max
40
75
24
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev.1.0: July 2013
www.aosmd.com
Page 1 of 5
Free Datasheet http://www.datasheet4u.com/



Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AO4455 Datasheet Preview

AO4455 Datasheet

30V P-Channel MOSFET

No Preview Available !

AO4455 pdf
AO4455
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
Gate Threshold Voltage
ID=-250µA, VGS=0V
VDS=-30V, VGS=0V
VDS=0V, VGS=±20V
VDS=0V, VGS=±25V
VDS=VGS ID=-250µA
VGS=-20V, ID=-15A
TJ=55°C
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=-10V, ID=-15A
VGS=-6V, ID=-10A
Forward Transconductance
VDS=-5V, ID=-15A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Gate Source Charge
VGS=-10V, VDS=-15V, ID=-15A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-15V, RL=1.0,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=-15A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=-15A, dI/dt=100A/µs
Min
-30
-1.5
2.1
Typ Max Units
V
-1
µA
-5
±1 µA
±10 µA
-2.1 -2.6 V
5 6.2
m
7.2 9
5.7 7.2 m
7.4 9.5 m
48 S
-0.7 -1
V
-4.2 A
2823
574
424
4.0
3400
600
6.4
pF
pF
pF
54 76
9
16
12.5
12.5
49
109
22.3 32
8.8
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t10s junction to ambient thermal resistance rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Rev.1.0: July 2013
www.aosmd.com
Page 2 of 5
Free Datasheet http://www.datasheet4u.com/


Part Number AO4455
Description 30V P-Channel MOSFET
Maker Alpha & Omega Semiconductors
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