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Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AO4458 Datasheet Preview

AO4458 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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AO4458 pdf
AO4458
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4458/L uses advanced trench technology to
provide excellent RDS(ON) with low gate charge. This
device is ESD protected and it is suitable for use as
a load switch or in PWM applications. AO4458 and
AO4458L are electrically identical.
-RoHs Compliant
-AO4458L is Halogen Free
Features
VDS (V) = 30V
ID = 20A
(VGS = 10V)
RDS(ON) < 4.6m(VGS = 10V)
RDS(ON) < 6.4m(VGS = 4.5V)
SD
SD
SD
GD
SOIC-8
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
10 Sec Steady State
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
Avalanche Current G
Repetitive avalanche energy L=0.3mH G
ID
IDM
IAR
EAR
20 15
17 12
80
50
375
Power Dissipation A
TA=25°C
TA=70°C
PD
3.1 1.7
2.0 1.1
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady State
Steady State
Symbol
RθJA
RθJL
Typ
31
59
16
Max
40
75
24
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
www.aosmd.com
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Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AO4458 Datasheet Preview

AO4458 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

AO4458 pdf
AO4458
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID = 250µA, VGS = 0V
30
V
IDSS Zero Gate Voltage Drain Current
VDS = 30V, VGS = 0V
TJ = 55°C
1
5 µA
IGSS Gate-Body leakage current
VDS = 0V, VGS = ±16V
±10
VGS(th) Gate Threshold Voltage
VDS = VGS ID = 250µA
1.0 1.7
3
V
ID(ON)
On state drain current
VGS = 10V, VDS = 5V
80
A
VGS = 10V, ID = 20A
3.8 4.6
RDS(ON) Static Drain-Source On-Resistance
TJ=125°C
5.3 6.5 m
VGS = 4.5V, ID = 18A
5.2 6.4
gFS Forward Transconductance
VDS = 5V, ID = 20A
72 S
VSD Diode Forward Voltage
IS = 1A,VGS = 0V
0.69 1
V
IS Maximum Body-Diode Continuous Current
3A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
5450
760
540
1
6800
1.5
pF
pF
pF
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge
Qg (4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=20A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=0.75,
tD(off)
Turn-Off DelayTime
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
84 112 nC
42 56 nC
12 nC
21 nC
13 ns
9.8 ns
49 ns
16 ns
42 56 ns
31 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using < 300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SO0A
curve provides a single pulse rating.
F. The current rating is based on the t 10s thermal resistance rating.
G. EAR and IAR ratings are based on low frequency and duty cycles to keep Tj=25C.
Rev1: Jan 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/


Part Number AO4458
Description N-Channel Enhancement Mode Field Effect Transistor
Maker Alpha & Omega Semiconductors
Total Page 4 Pages
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