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Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AO4566 Datasheet Preview

AO4566 Datasheet

30V N-Channel MOSFET

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AO4566 pdf
AO4566
30V N-Channel MOSFET
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(ON) at 4.5V VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
30V
12A
< 11m
< 17m
Application
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
Top View
D
D
D
D
SOIC-8
Bottom View
100% UIS Tested
100% Rg Tested
D
G
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain TA=25°C
CurrentG
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
VDS Spike
Power Dissipation B
100ns
TA=25°C
TA=70°C
VDS
VGS
ID
IDM
IAS
EAS
VSPIKE
PD
Junction and Storage Temperature Range
TJ, TSTG
G
S
Maximum
30
±20
12
9.4
48
15
11
36
2.5
1.6
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
42
70
20
Max
50
85
30
Units
V
V
A
A
mJ
V
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: Aug 2012
www.aosmd.com
Page 1 of 5
Free Datasheet http://www.datasheet4u.com/



Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AO4566 Datasheet Preview

AO4566 Datasheet

30V N-Channel MOSFET

No Preview Available !

AO4566 pdf
AO4566
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
IDSS Zero Gate Voltage Drain Current
VDS=30V, VGS=0V
TJ=55°C
1
µA
5
IGSS Gate-Body leakage current
VDS=0V, VGS=±20V
±100 nA
VGS(th) Gate Threshold Voltage
VDS=VGSID=250µA
1.3 1.8 2.3
V
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=12A
TJ=125°C
9 11
m
12.5 15
VGS=4.5V, ID=10A
13.5 17 m
gFS Forward Transconductance
VDS=5V, ID=12A
45 S
VSD Diode Forward Voltage
IS=1A,VGS=0V
0.72 1
V
IS Maximum Body-Diode Continuous Current
3.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
542 pF
233 pF
31 pF
1 2 3
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
9 12.2 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=12A
4.3 5.8 nC
2.2 nC
Qgd Gate Drain Charge
1.7 nC
tD(on)
Turn-On DelayTime
4 ns
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=1.25,
3.5
ns
tD(off)
Turn-Off DelayTime
RGEN=3
18 ns
tf Turn-Off Fall Time
3 ns
trr Body Diode Reverse Recovery Time IF=12A, dI/dt=500A/µs
9.7 ns
Qrr Body Diode Reverse Recovery Charge IF=12A, dI/dt=500A/µs
11.5
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Aug 2012
www.aosmd.com
Page 2 of 5
Free Datasheet http://www.datasheet4u.com/


Part Number AO4566
Description 30V N-Channel MOSFET
Maker Alpha & Omega Semiconductors
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