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Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AOB1100L Datasheet Preview

AOB1100L Datasheet

100V N-Channel Rugged Planar MOSFET

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AOB1100L pdf
AOT1100L/AOB1100L
100V N-Channel Rugged Planar MOSFET
General Description
Product Summary
The AOT1100L/AOB1100L uses a robust technology that
is designed to provide efficient and reliable power
conversion even in the most demanding applications,
including motor control. With low RDS(ON) and excellent
thermal capability this device is appropriate for high
current switching and can endure adverse operating
conditions.This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
100V
130A
< 12m
Top View
D
TO220
Bottom View
D
Top View
D
TO-263
D2PAK
Bottom View
D
S
GD
AOT1100
G
SD
S
G
AOB1100
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS
EAS
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
100
±20
130
92
208
8
6
122
744
500
250
2.1
1.3
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
12
48
0.22
Max
15
60
0.3
G
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev0: Dec 2011
www.aosmd.com
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/



Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AOB1100L Datasheet Preview

AOB1100L Datasheet

100V N-Channel Rugged Planar MOSFET

No Preview Available !

AOB1100L pdf
AOT1100L/AOB1100L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=100V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS, ID=250µΑ
On state drain current
VGS=10V, VDS=5V
VGS=10V, ID=20A
Static Drain-Source On-Resistance
TO220
VGS=10V, ID=20A
TO263
Forward Transconductance
VDS=5V, ID=20A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous CurrentG
TJ=55°C
TJ=125°C
100
2.6
208
3.2
10
19
9.7
53
0.69
1
5
100
3.8
12
22
11.7
1
130
V
µA
nA
V
A
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
4833
721
35
0.5 1.1 1.7
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
82 100 nC
Qgs Gate Source Charge
VGS=10V, VDS=50V, ID=20A
23 nC
Qgd Gate Drain Charge
19 nC
tD(on)
Turn-On DelayTime
21 ns
tr Turn-On Rise Time
VGS=10V, VDS=50V, RL=2.5, 22 ns
tD(off)
Turn-Off DelayTime
RGEN=3
50 ns
tf Turn-Off Fall Time
4.5 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
64 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
880 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C. Maximum UIS current limited by test equipment.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: Dec 2011
www.aosmd.com
Page 2 of 6
Free Datasheet http://www.datasheet4u.com/


Part Number AOB1100L
Description 100V N-Channel Rugged Planar MOSFET
Maker Alpha & Omega Semiconductors
Total Page 6 Pages
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