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Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AOB2910L Datasheet Preview

AOB2910L Datasheet

100V N-Channel MOSFET

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AOB2910L pdf
AOT2910L/AOB2910L/AOTF2910L
100V N-Channel MOSFET
General Description
Product Summary
The AOT2910L & AOB2910L & AOTF2910L uses trench
MOSFET technology that is uniquely optimized to provide
the most efficient high frequency switching performance.
Both conduction and switching power losses are
minimized due to an extremely low combination of RDS(ON),
Ciss and Coss. This device is ideal for boost converters
and synchronous rectifiers for consumer, telecom,
industrial power supplies and LED backlighting.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
100% UIS Tested
100% Rg Tested
TO-220
TO-220F
Top View
TO-263
D2PAK
D
100V
30A / 22A
< 24mΩ (* 23.5mΩ)
< 33mΩ (* 32.5mΩ)
D
AOT2910L
DS
G
AOTF2910L
S
GD
G
AOB2910L
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol AOT2910L/AOB2910L
AOTF2910L
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
±20
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
ID
IDM
30 22
21 15.5
80
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS
EAS
6.0
4.5
15
11
TC=25°C
Power Dissipation B TC=100°C
PD
50
25
27
13.5
TA=25°C
Power Dissipation A TA=70°C
PDSM
2.1
1.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
AOT2910L/AOB2910L
15
60
3
AOTF2910L
15
60
5.5
* Surface mount package TO263
G
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0 : Oct. 2012
www.aosmd.com
Page 1 of 7
Free Datasheet http://www.datasheet4u.com/



Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AOB2910L Datasheet Preview

AOB2910L Datasheet

100V N-Channel MOSFET

No Preview Available !

AOB2910L pdf
AOT2910L/AOB2910L/AOTF2910L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
RDS(ON) Static Drain-Source On-Resistance
ID=250µA, VGS=0V
VDS=100V, VGS=0V
VDS=0V, VGS=±20V
VDS=VGSID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
TO220/TO220F
VGS=4.5V, ID=18A
TO220/TO220F
VGS=10V, ID=20A
TO263
VGS=4.5V, ID=18A
TO263
TJ=55°C
TJ=125°C
100
1.6
80
2.15
19
34
24.5
18.5
24
1
5
±100
2.7
24
43
33
23.5
32.5
V
µA
nA
V
A
m
m
m
m
gFS Forward Transconductance
VDS=5V, ID=20A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
40
0.72
1
30
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=50V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1190
95
7
0.5 1.1
1.7
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
16.5 25 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=50V, ID=20A
7 12 nC
4.5 nC
Qgd Gate Drain Charge
2.5 nC
tD(on)
Turn-On DelayTime
7 ns
tr Turn-On Rise Time
VGS=10V, VDS=50V, RL=2.5,
8
ns
tD(off)
Turn-Off DelayTime
RGEN=3
20 ns
tf Turn-Off Fall Time
3 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
30 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
145 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : Oct. 2012
www.aosmd.com
Page 2 of 7
Free Datasheet http://www.datasheet4u.com/


Part Number AOB2910L
Description 100V N-Channel MOSFET
Maker Alpha & Omega Semiconductors
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