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Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AOD4104 Datasheet Preview

AOD4104 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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AOD4104 pdf
AOD4104
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD4104 uses advanced trench technology to
provide excellent RDS(ON), shoot-through immunity
and body diode characteristics. This device is ideally
suited for use as a low side switch in CPU core
power conversion.
-RoHS Compliant
-Halogen Free*
VDS (V) = 25V
ID = 75A (VGS = 10V)
RDS(ON) < 3.6m(VGS = 20V)
RDS(ON) < 4.5m(VGS = 12V)
RDS(ON) < 5.4m(VGS = 10V)
100% UIS Tested!
100% Rg Tested!
Top View
D
TO-252
D-PAK Bottom View
D
G
SG
GS
Absolute Maximum Ratings T A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TC=25°C G
Current B,G,I
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.3mH C
VGS
ID
IDM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
Maximum Junction-to-Case B
Steady-State
Symbol
RθJA
RθJC
Maximum
25
±30
75
75
200
30
135
100
50
2.5
1.6
-55 to 175
Typ
16
40
1
S
Max
20
50
1.5
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/



Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AOD4104 Datasheet Preview

AOD4104 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

AOD4104 pdf
AOD4104
Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
ID=250µA, VGS=0V
VDS=20V, VGS=0V
VDS=0V, VGS= ±30V
VDS=VGS ID=250µA
VGS=12V, VDS=5V
VGS=20V, ID=20A
25
TJ=55°C
2
200
0.005
3
3
1
5
100
4
3.6
V
µA
nA
V
A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=12V, ID=20A
VGS=10V, ID=20A
Forward Transconductance
VDS=5V, ID=20A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=125°C
4.2 5
m
3.7 4.5
4.5 5.4
75 S
0.7 1
V
55 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=12.5V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
2100
850
400
0.35
2400
1
pF
pF
pF
SWITCHING PARAMETERS
Qg(12V)
Qg(10V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VGS=10V, VDS=12.5V, ID=20A
VGS=10V, VDS=12.5V, RL=0.68,
RGEN=3
IF=20A, dI/dt=100A/µs
IF=20A, dI/dt=100A/µs
40 50 nC
33 nC
11 nC
14 nC
12 ns
19 ns
15 ns
8.5 ns
42 ns
34 nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
I. The maximum current rating is limited by bond-wires.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev1:Oct 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/


Part Number AOD4104
Description N-Channel Enhancement Mode Field Effect Transistor
Maker Alpha & Omega Semiconductors
Total Page 6 Pages
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