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Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AOD4106 Datasheet Preview

AOD4106 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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AOD4106 pdf
AOD4106
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD4106 uses advanced trench technology to
provide excellent RDS(ON), low gate charge.This device is
suitable for use as a low side switch in SMPS and
general purpose applications. Standard Product
AOD4106 is Pb-free (meets ROHS & Sony 259
specifications). AOD4106L is a Green Product ordering
option. AOD4106 and AOD4106L are electrically
identical.
Features
VDS (V) = 25V
ID = 50A (VGS = 20V)
RDS(ON) < 5m(VGS = 20V)
RDS(ON) < 6.5m(VGS = 12V)
RDS(ON) < 8.1m(VGS = 10V)
UIS Tested
Rg,Ciss,Coss,Crss Tested
TO-252
D-PAK
Top View
Drain Connected to
Tab
D
G
GD S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.3mH C
ID
IDM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
25
±30
50
50
180
30
135
75
38
6.25
4
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
Maximum Junction-to-Ambient A,D
Maximum Junction-to-Case B
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
15
41
1.5
Max
20
50
2.0
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
Free Datasheet http://www.datasheet4u.com/



Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AOD4106 Datasheet Preview

AOD4106 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

AOD4106 pdf
AOD4106
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
25
V
IDSS Zero Gate Voltage Drain Current
VDS=20V, VGS=0V
TJ=55°C
1
5
uA
IGSS Gate-Body leakage current
VDS=0V, VGS= ±30V
100 nA
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
234V
ID(ON)
On state drain current
VGS=12V, VDS=5V
180
A
RDS(ON) Static Drain-Source On-Resistance
VGS=20V, ID=20A
VGS=12V, ID=20A
TJ=125°C
4.1
6.5
5.0
m
5.4 6.5 m
VGS=10V, ID=20A
6.6 8.1 m
gFS Forward Transconductance
VDS=5V, ID=20A
26 S
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous CurrentG
0.7 1
50
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=12.5V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1561
642
323
2.5
1875
3.8
pF
pF
pF
SWITCHING PARAMETERS
Qg(12V) Total Gate Charge
26.5 33
nC
Qg(10V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=12.5V, ID=20A
22.5
8.3
nC
nC
Qgd Gate Drain Charge
10 nC
tD(on)
Turn-On DelayTime
12 ns
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=12.5V, RL=0.63,
RGEN=3
19
17
ns
ns
tf Turn-Off Fall Time
9.5 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs
32 40 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
24 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A =25°C. The Power dissipation PDSM is based on t<10s R θJA and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Re0: Sept. 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
Free Datasheet http://www.datasheet4u.com/


Part Number AOD4106
Description N-Channel Enhancement Mode Field Effect Transistor
Maker Alpha & Omega Semiconductors
Total Page 5 Pages
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