Electrical Characteristics (TJ=25°C unless otherwise noted)
Min Typ Max Units
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body leakage current
VDS=0V, VGS= ±30V
Gate Threshold Voltage
On state drain current
RDS(ON) Static Drain-Source On-Resistance
5.4 6.5 mΩ
6.6 8.1 mΩ
gFS Forward Transconductance
VSD Diode Forward Voltage
IS Maximum Body-Diode Continuous CurrentG
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=12.5V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Qg(12V) Total Gate Charge
Qg(10V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=12.5V, ID=20A
Qgd Gate Drain Charge
Turn-On Rise Time
VGS=10V, VDS=12.5V, RL=0.63Ω,
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs
32 40 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A =25°C. The Power dissipation PDSM is based on t<10s R θJA and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Re0: Sept. 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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