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Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AOD4110 Datasheet Preview

AOD4110 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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AOD4110 pdf
AOD4110
N-Channel Enhancement Mode Field Effect Transistor
SRFET TM
General Description
Features
The AOD4110 uses advanced trench technology with
a monolithically integrated Schottky diode to provide
excellent RDS(ON),and low gate charge. This device is
suitable for use as a low side FET in SMPS, load
switching and general purpose applications. Standard
Product AOD4110 is Pb-free (meets ROHS & Sony
259 specifications).
VDS (V) = 30V
ID =40A (VGS = 10V)
RDS(ON) < 7.2m(VGS = 10V)
RDS(ON) < 10.5m(VGS = 4.5V)
UIS Tested!
Rg,Ciss,Coss,Crss Tested
TO-252 D-PAK
D
Top View
Drain Connected to
Tab
SRFET TM
Soft Recovery MOSFET:
G Integrated Schottky Diode
GD S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C G
Current B
TC=100°C G
Pulsed Drain Current C
Continuous Drain
CurrentA
Avalanche Current C
TA=25°C
TA=70°C
Repetitive avalanche energy L=0.3mH C
TC=25°C
Power Dissipation B TC=100°C
TA=25°C
Power Dissipation A TA=70°C
Junction and Storage Temperature Range
ID
IDM
IDSM
IAR
EAR
PD
PDSM
TJ, TSTG
S
Maximum
30
±20
40
40
180
22
18
25
94
63
31
6
4
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case D
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
15
41
2
Max
20
50
2.4
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/



Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AOD4110 Datasheet Preview

AOD4110 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

AOD4110 pdf
AOD4110
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250uA, VGS=0V
VDS=30V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
VGS=4.5V, ID=20A
Forward Transconductance
VDS=5V, ID=20A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode + Schottky Continuous CurrentG
TJ=125°C
TJ=125°C
30
1.3
180
1.6
6
9.0
8.5
55
0.37
0.1
20
0.1
2
7.2
11.0
10.5
0.5
40
V
mA
µA
V
A
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
2154
474
185
0.75
2650
1.1
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=20A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=0.75,
tD(off)
Turn-Off DelayTime
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=300A/µs
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=300A/µs
37
17.8
6.6
7.6
6.8
7.2
25.2
5.8
12
10.5
45
18
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A =25°C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150°C, using t10s junction-to-ambient thermal
resistance.The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be
used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev0: Apr.2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/


Part Number AOD4110
Description N-Channel Enhancement Mode Field Effect Transistor
Maker Alpha & Omega Semiconductors
Total Page 5 Pages
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