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Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AOD4126 Datasheet Preview

AOD4126 Datasheet

100V N-Channel MOSFET

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AOD4126 pdf
AOD4126/AOI4126
100V N-Channel MOSFET
SDMOS TM
General Description
Product Summary
The AOD4126&AOI4126 are fabricated with SDMOSTM
trench technology that combines excellent RDS(ON) with
low gate charge.The result is outstanding efficiency with
controlled switching behavior. This universal technology is
well suited for PWM, load switching and general purpose
applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 7V)
100% UIS Tested
100% Rg Tested
100V
43A
< 24m
< 30m
Top View
D
TO252
DPAK
Bottom View
D
Top View
TO-251A
IPAK
Bottom View
D
S
G
G
S
S
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current B
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
Current A
Avalanche Current C
TA=25°C
TA=70°C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
100
±25
43
30
100
7.5
6
28
39
100
50
3
1.9
-55 to 175
G
G
D
S
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
8
35
1
Max
10
42
1.5
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev1 : May 2012
www.aosmd.com
Page 1 of 7
Free Datasheet http://www.datasheet4u.com/



Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AOD4126 Datasheet Preview

AOD4126 Datasheet

100V N-Channel MOSFET

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AOD4126 pdf
AOD4126/AOI4126
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
100
V
IDSS Zero Gate Voltage Drain Current
VDS=100V, VGS=0V
TJ=55°C
10
µA
50
IGSS Gate-Body leakage current
VDS=0V, VGS= ±25V
100 nA
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
2 3.3 4
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
100
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=20A
TJ=125°C
19 24
m
36 43
VGS=7V, ID=15A
23.5 30 m
gFS Forward Transconductance
VDS=5V, ID=20A
34 S
VSD Diode Forward Voltage
IS=1A,VGS=0V
0.66 1
V
IS Maximum Body-Diode Continuous Current
40 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=50V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1400
115
33
0.3
1770
165
55
0.65
2200
214
80
1.0
pF
pF
pF
SWITCHING PARAMETERS
Qg Total Gate Charge
14 28 42 nC
Qgs Gate Source Charge
VGS=10V, VDS=50V, ID=20A
4 9 14 nC
Qgd Gate Drain Charge
6 10 14 nC
tD(on)
Turn-On DelayTime
12 ns
tr Turn-On Rise Time
VGS=10V, VDS=50V, RL=2.5, 4 ns
tD(off)
Turn-Off DelayTime
RGEN=3
17 ns
tf Turn-Off Fall Time
5 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
12 20 26 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
60 82 110 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1 : May 2012
www.aosmd.com
Page 2 of 7
Free Datasheet http://www.datasheet4u.com/


Part Number AOD4126
Description 100V N-Channel MOSFET
Maker Alpha & Omega Semiconductors
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