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Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AOD4128 Datasheet Preview

AOD4128 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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AOD4128 pdf
AOD4128
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD4128 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and low gate resistance.
This device is ideally suited for use as a low side switch in
CPU core power conversion. The device can also be used
in PWM, load switching and general purpose applications.
Standard Product AOD412 8 is Pb-free (meets ROHS &
Sony 259 specifications).
Features
VDS (V) = 25V
ID = 60 A
(VGS = 10V)
RDS(ON) < 4 m(VGS = 10V)
RDS(ON) < 7 m(VGS = 4.5V)
TO-252
D-PAK
D
Top View
Drain Connected to
Tab
G
S
GD S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
CurrentG
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.3mH C
ID
IDM
IAR
EAR
Power Dissipation B
TC=25°C
TC=100°C
PD
Power Dissipation A
TA=25°C
TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
25
±20
60
60
165
45
304
75
37
2.0
1.3
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
t 10s
Steady State
Steady State
Symbol
RθJA
RθJC
Typ
18
50
1
Max
25
60
2
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/



Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AOD4128 Datasheet Preview

AOD4128 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

AOD4128 pdf
AOD4128
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250uA, VGS=0V
25
V
IDSS Zero Gate Voltage Drain Current
VDS=25V, VGS=0V
TJ=55°C
1
5
uA
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±20V
VDS=VGS, ID=250µA
VGS=10V, VDS=5V
100 nA
1.3 1.6 2.5
V
165 A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=10V, ID=20A
VGS=4.5V, ID=20A
Forward Transconductance
VDS=5V, ID=20A
Diode Forward Voltage
IS=1A, VGS=0V
Maximum Body-Diode Continuous CurrentG
TJ=125°C
3.4
5.0
4
6
m
5.8 7 m
55 S
0.7 1
V
60 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=12.5V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
3578
731
438
2.5
4300
950
615
4
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
61.8 80
nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=12.5V, ID=20A
29.8 39
8.5
nC
nC
Qgd Gate Drain Charge
12.9 nC
tD(on)
Turn-On DelayTime
11.6 ns
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=12.5V,
RL=0.63, RGEN=3
17.7 ns
45 ns
tf Turn-Off Fall Time
20 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs
39 48 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
32 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P D is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Re0: June. 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/


Part Number AOD4128
Description N-Channel Enhancement Mode Field Effect Transistor
Maker Alpha & Omega Semiconductors
Total Page 5 Pages
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