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Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AOD4140 Datasheet Preview

AOD4140 Datasheet

POWER Transistor

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AOD4140 pdf
AOD4140
N-Channel SDMOSTM POWER Transistor
General Description
Features
The AOD4140 is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low
gate charge.The result is outstanding efficiency with
controlled switching behavior. This universal technology
is well suited for PWM, load switching and general
purpose applications.
-RoHS Compliant
-Halogen Free*
VDS (V) = 25V
ID = 43A
RDS(ON) <7m
RDS(ON) <14m
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
100% UIS Tested!
100% Rg Tested!
Top View
D
TO-252
D-PAK Bottom View
D
GS
SG
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
CurrentG
TC=100°C
Pulsed Drain Current C
Pulsed Forward Diode CurrentC
Avalanche Current C
Repetitive avalanche energy L=50uH C
ID
IDM
ISM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
G
Maximum
25
±20
43
34
120
120
35
61
50
25
2.5
1.6
-55 to 175
S
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
14.2
39
2.5
Max
20
50
3
Units
V
V
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/



Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AOD4140 Datasheet Preview

AOD4140 Datasheet

POWER Transistor

No Preview Available !

AOD4140 pdf
AOD4140
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250uA, VGS=0V
25
V
IDSS Zero Gate Voltage Drain Current
VDS=25V, VGS=0V
TJ=55°C
10
µA
50
IGSS Gate-Body leakage current
VDS=0V, VGS=±20V
100 nA
VGS(th) Gate Threshold Voltage
VDS=VGS, ID=250µA
123V
ID(ON)
On state drain current
VGS=10V, VDS=5V
120
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=30A
TJ=125°C
5.7 7
m
8.6 10.5
VGS=4.5V, ID=20A
11 14 m
gFS Forward Transconductance
VDS=5V, ID=30A
50 S
VSD Diode Forward Voltage
IS=1A, VGS=0V
0.7 1
V
IS Maximum Body-Diode Continuous Current
55 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=12.5V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
990 1180 1450
210 275 350
125 175 245
1.1 1.7 2.5
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
18 21.7 26 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=12.5V, ID=30A
9 11 13 nC
34
5 nC
Qgd Gate Drain Charge
4.5 6.4 9 nC
tD(on)
Turn-On DelayTime
6.8 ns
tr Turn-On Rise Time
VGS=10V, VDS=12.5V,
13.8 ns
tD(off)
Turn-Off DelayTime
RL=0.42, RGEN=3
21.5 ns
tf Turn-Off Fall Time
8.7 ns
trr Body Diode Reverse Recovery Time IF=30A, dI/dt=500A/µs
8.5 10.6 13
ns
Qrr Body Diode Reverse Recovery Charge IF=30A, dI/dt=500A/µs
13 16 19 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1 ST 2008).
Rev 1 : Oct 2008
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/


Part Number AOD4140
Description POWER Transistor
Maker Alpha & Omega Semiconductors
Total Page 7 Pages
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