http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf





Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AOD4142 Datasheet Preview

AOD4142 Datasheet

POWER Transistor

No Preview Available !

AOD4142 pdf
AOD4142
N-Channel SDMOSTM POWER Transistor
General Description
Features
The AOD4142 is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low gate
charge.The result is outstanding efficiency with controlled
switching behavior. This universal technology is well suited
for PWM, load switching and general purpose applications.
VDS (V) = 25V
ID = 50A
RDS(ON) < 5.3m
RDS(ON) < 9.8m
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
-RoHS Compliant
-Halogen Free*
100% UIS Tested!
100% R g Tested!
Top View
D
TO-252
D-PAK
Bottom View
D
GS
SG
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
CurrentG
Pulsed Drain Current C
TC=25°C
TC=100°C
ID
IDM
Continuous Drain
Current A
Avalanche Current C
TA=25°C
TA=70°C
Repetitive avalanche energy L=50uH C
IDSM
IAR
EAR
Power Dissipation B
TC=25°C
TC=100°C
PD
Power Dissipation A
TA=25°C
TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
G
Maximum
25
±20
50
43
120
17
13
50
63
50
25
2.5
1.6
-55 to 175
Typ
15
41
2.1
S
Max
20
50
3
Units
V
V
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/



Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AOD4142 Datasheet Preview

AOD4142 Datasheet

POWER Transistor

No Preview Available !

AOD4142 pdf
AOD4142
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
25
V
IDSS Zero Gate Voltage Drain Current
VDS=25V, VGS=0V
TJ=55°C
10
µA
50
IGSS Gate-Body leakage current
VDS=0V, VGS=±20V
100 nA
VGS(th) Gate Threshold Voltage
VDS=VGS, ID=250µA
1.2 2 2.5 V
ID(ON)
On state drain current
VGS=10V, VDS=5V
120
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=30A
TJ=125°C
4.4 5.3
m
6.6 7.9
VGS=4.5V, ID=20A
7.8 9.8 m
gFS Forward Transconductance
VDS=5V, ID=30A
65 S
VSD Diode Forward Voltage
IS=1A, VGS=0V
IS Maximum Body-Diode Continuous CurrentG
0.7 1
50
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=12.5V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1440
310
170
0.8
1800
445
285
1.6
2160
580
400
2.4
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=12.5V, ID=30A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=12.5V,
RL=0.42, RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=30A, dI/dt=500A/µs
Body Diode Reverse Recovery Charge IF=30A, dI/dt=500A/µs
25 31 37
12 15 18
4 4.8 6
5.3 8.9 13
8
10.4
29
9
9.6 12 14
17 21 25
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev1 : Oct 2008
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/


Part Number AOD4142
Description POWER Transistor
Maker Alpha & Omega Semiconductors
Total Page 7 Pages
PDF Download
AOD4142 pdf
Download PDF File
AOD4142 pdf
View for Mobile



Buy Electronic Components




Related Datasheet

1 AOD414 N-Channel Enhancement Mode Field Effect Transistor Alpha & Omega Semiconductors
Alpha & Omega Semiconductors
AOD414 pdf
2 AOD414 N-Channel 30-V (D-S) MOSFET Freescale
Freescale
AOD414 pdf
3 AOD4140 POWER Transistor Alpha & Omega Semiconductors
Alpha & Omega Semiconductors
AOD4140 pdf
4 AOD4142 POWER Transistor Alpha & Omega Semiconductors
Alpha & Omega Semiconductors
AOD4142 pdf
5 AOD4144 POWER Transistor Alpha & Omega Semiconductors
Alpha & Omega Semiconductors
AOD4144 pdf
6 AOD4146 30V N-Channel MOSFET Alpha & Omega Semiconductors
Alpha & Omega Semiconductors
AOD4146 pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components