http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf





Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AOD4156 Datasheet Preview

AOD4156 Datasheet

30V N-Channel MOSFET

No Preview Available !

AOD4156 pdf
AOD4156
30V N-Channel MOSFET
SDMOS TM
General Description
Product Summary
The AOD4156 is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low gate
charge.The result is outstanding efficiency with controlled
switching behavior. This universal technology is well
suited for PWM, load switching and general purpose
applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
30V
55A
< 5.6m
< 9.5m
TopView
D
TO252
DPAK
Bottom View
D
SG
GS
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.05mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
55
43
190
15
12
50
63
62
31
2.5
1.6
-55 to 175
G
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
15
41
2
Max
20
50
2.4
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: April 2010
www.aosmd.com
Page 1 of 7
Free Datasheet http://www.datasheet4u.com/



Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AOD4156 Datasheet Preview

AOD4156 Datasheet

30V N-Channel MOSFET

No Preview Available !

AOD4156 pdf
AOD4156
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
IDSS Zero Gate Voltage Drain Current
VDS=30V, VGS=0V
TJ=55°C
100
µA
500
IGSS Gate-Body leakage current
VDS=0V, VGS= ±20V
100 nA
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
1.6 2.1
3
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
190
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=20A
TJ=125°C
4.7 5.6
m
7.4 8.9
VGS=4.5V, ID=10A
7.9 9.5 m
gFS Forward Transconductance
VDS=5V, ID=20A
50 S
VSD Diode Forward Voltage
IS=1A,VGS=0V
0.7 1
V
IS Maximum Body-Diode Continuous Current
55 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1630
260
130
0.5
2037
375
220
1.1
2440
490
300
1.7
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
28 35 42 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=20A
13 16 20 nC
6.8 8.6 10 nC
Qgd Gate Drain Charge
2.8 4.6 6.4 nC
tD(on)
Turn-On DelayTime
8.8 ns
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=0.75,
26
ns
tD(off)
Turn-Off DelayTime
RGEN=3
23 ns
tf Turn-Off Fall Time
6 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
8 10 12 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
12 15 18 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: April 2010
www.aosmd.com
Page 2 of 7
Free Datasheet http://www.datasheet4u.com/


Part Number AOD4156
Description 30V N-Channel MOSFET
Maker Alpha & Omega Semiconductors
Total Page 7 Pages
PDF Download
AOD4156 pdf
Download PDF File
AOD4156 pdf
View for Mobile






Related Datasheet

1 AOD4156 30V N-Channel MOSFET Freescale
Freescale
AOD4156 pdf
2 AOD4156 30V N-Channel MOSFET Alpha & Omega Semiconductors
Alpha & Omega Semiconductors
AOD4156 pdf




Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components