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Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AOD4186 Datasheet Preview

AOD4186 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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AOD4186 pdf
AOD4186
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD4186 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for low
voltage inverter applications.
VDS (V) =40V
ID = 50A
RDS(ON) < 15m
RDS(ON) < 19m
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
- RoHS Compliant
- Halogen Free
Top View
D
TO-252
D-PAK Bottom View
100% UIS Tested!
100% R g Tested!
D
SG
GS
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDSM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
G
Maximum
40
±20
35
27
70
10
8
24
29
50
25
2.5
1.6
-55 to 175
S
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
16.7
40
2.5
Max
25
50
3
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/



Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AOD4186 Datasheet Preview

AOD4186 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

AOD4186 pdf
AOD4186
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
40
V
IDSS Zero Gate Voltage Drain Current
VDS=40V, VGS=0V
TJ=55°C
1
µA
5
IGSS Gate-Body leakage current
VDS=0V, VGS= ±20V
100 nA
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
1.7 2.2 2.7
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
100
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=20A
TJ=125°C
12.4 15
m
20 24
VGS=4.5V, ID=15A
14.5 19 m
gFS Forward Transconductance
VDS=5V, ID=20A
60 S
VSD Diode Forward Voltage
IS=1A,VGS=0V
0.75 1
V
IS Maximum Body-Diode Continuous Current
60 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
780 980 1200 pF
90 130 170 pF
48 80 110 pF
1.9 3.8 5.7
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
13.5 17 20 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=20V, ID=20A
7 9 11 nC
2 2.5 3 nC
Qgd Gate Drain Charge
2.7 4.5 6.3 nC
tD(on)
Turn-On DelayTime
6 ns
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=20V, RL=1.0, 12 ns
RGEN=3
26 ns
tf Turn-Off Fall Time
7 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
9 12 15 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
24 31 38 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev 0 : Oct-08
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/


Part Number AOD4186
Description N-Channel Enhancement Mode Field Effect Transistor
Maker Alpha & Omega Semiconductors
Total Page 6 Pages
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