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Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AOI4185 Datasheet Preview

AOI4185 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

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AOI4185 pdf
AOD4185/AOI4185
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD4185/AOI4185 uses advanced trench
technology to provide excellent RDS(ON) and low gate
charge. With the excellent thermal resistance of the
DPAK/IPAK package, this device is well suited for high
current applications.
-RoHS Compliant
-Halogen Free*
Features
VDS (V) = -40V
ID = -40A
RDS(ON) < 15m
RDS(ON) < 20m
(VGS = -10V)
(VGS = -10V)
(VGS = -4.5V)
100% UIS Tested!
100% Rg Tested!
Top View
TO252
DPAK
Bottom View
D
D
Top View
D
TO-251A
IPAK
Bottom View
D
D
S
G
G
S
DS
G
G
G
SD
S
Absolute Maximum Ratings TC=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current B,H
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
ID
IDM
IAR
EAR
Power Dissipation B
TC=25°C
TC=100°C
PD
Power Dissipation A
TA=25°C
TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
-40
±20
-40
-31
-115
-42
88
62.5
31
2.5
1.6
-55 to 175
Units
V
V
A
mJ
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,G
Maximum Junction-to-Ambient A,G
Maximum Junction-to-Case D,F
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
15
41
2
Max
20
50
2.4
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/



Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AOI4185 Datasheet Preview

AOI4185 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

AOI4185 pdf
AOD4185/AOI4185
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=-250µA, VGS=0V
VDS=-40V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±20V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-20A
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VGS=-4.5V, ID=-15A
VDS=-5V, ID=-20A
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
-40
-1.7
-115
-1
-5
±100
-1.9 -3
12.5
19
16
50
-0.72
15
23
20
-1
-20
V
µA
nA
V
A
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
2550
280
190
2.5 4
6
pF
pF
pF
SWITCHING PARAMETERS
Qg (-10V) Total Gate Charge
Qg (-4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=-10V, VDS=-20V,
ID=-20A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=-10V, VDS=-20V, RL=1,
tD(off)
Turn-Off DelayTime
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=-20A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/µs
42
18.6
7
8.6
9.4
20
55
30
38
47
55
49
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM are
based on TJ(MAX)=150°C, using steady state junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
GmF..aTTxhihmeesusemectjeuusrnvtcsetsiaoraneretpeebmrafposeremrdaetoudnrewthoitehf TjtuhJn(eMcAdtXioe)=nv1i-ct7oe5-c°maoCsue.nTtthehedermoSnaOl1Aimicnpu2erFvdRee-np4crobevowiadhredicshwaiitsshimn2goelzea.spCuurolespdepwerarit,thinintgha.esdtiellvaicireemTTnvoBBiurDDonntemdetnot
a large heatsink,
with TA=25°C.
assuming
a
H. The maximum current rating is limited by bond-wires.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev4: April, 2012
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/


Part Number AOI4185
Description P-Channel Enhancement Mode Field Effect Transistor
Maker Alpha & Omega Semiconductors
Total Page 6 Pages
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