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Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AON7700 Datasheet Preview

AON7700 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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AON7700 pdf
AON7700
30V N-Channel MOSFET
SRFET TM
General Description
Product Summary
SRFETTM AON7700 uses advanced trench technology
with a monolithically integrated Schottky diode to provide
excellent RDS(ON),and low gate charge. This device is
suitable for use as a low side FET in SMPS, load
switching and general purpose applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
30V
40A
< 7.2m
< 8.6m
100% UIS Tested
100% Rg Tested
DFN 3x3 EP
Top View
Bottom View
Pin 1
Top View
18
27
36
45
G
D
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS
EAS
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±12
40
28
100
16
12
17
14
26
10
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
30
60
4
Max
40
75
4.8
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 3: May. 2012
www.aosmd.com
Page 1 of 7



Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AON7700 Datasheet Preview

AON7700 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

AON7700 pdf
AON7700
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=10mA, VGS=0V
VDS=30V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS=±12V
VDS=VGSID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=12A
VGS=4.5V, ID=10A
Forward Transconductance
VDS=5V, ID=12A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=125°C
TJ=125°C
30
1.2
100
V
0.5
mA
100
±100 nA
1.7 2.2
V
A
5.5 7.2
m
9 11
6.6 8.6 m
45 S
0.4 0.7
V
30 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1690
175
120
0.7 1.4 2.1
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
31 44 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=12A
14 20 nC
4 nC
Qgd Gate Drain Charge
5 nC
tD(on)
Turn-On DelayTime
6 ns
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=1.25,
9
ns
tD(off)
Turn-Off DelayTime
RGEN=3
27 ns
tf Turn-Off Fall Time
4 ns
trr Body Diode Reverse Recovery Time IF=12A, dI/dt=500A/µs
7 ns
Qrr Body Diode Reverse Recovery Charge IF=12A, dI/dt=500A/µs
8 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 3: May 2012
www.aosmd.com
Page 2 of 7


Part Number AON7700
Description N-Channel Enhancement Mode Field Effect Transistor
Maker Alpha & Omega Semiconductors
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