http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf





Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AOT1404L Datasheet Preview

AOT1404L Datasheet

40V N-Channel Rugged Planar MOSFET

No Preview Available !

AOT1404L pdf
AOT1404L/AOB1404L
40V N-Channel Rugged Planar MOSFET
General Description
Product Summary
The AOT1404L/AOB1404L uses a robust technology that
is designed to provide efficient and reliable power
conversion even in the most demanding applications,
including motor control. With low RDS(ON) and excellent
thermal capability this device is appropriate for high
current switching and can endure adverse operating
conditions.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
40V
220A
< 4.2m
Top View
D
TO220
Bottom View
D
Top View
TO-263
D2PAK
Bottom View
DD
S
GD
G
SD
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
G
S
Maximum
40
±20
220
157
500
15
11
140
980
417
208
2.1
1.3
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
12
48
0.3
Max
15
60
0.36
G
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev1: May 2011
www.aosmd.com
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/



Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AOT1404L Datasheet Preview

AOT1404L Datasheet

40V N-Channel Rugged Planar MOSFET

No Preview Available !

AOT1404L pdf
AOT1404L/AOB1404L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
40
V
IDSS Zero Gate Voltage Drain Current
VDS=40V, VGS=0V
TJ=55°C
1
µA
5
IGSS Gate-Body leakage current
VDS=0V, VGS= ±20V
100 nA
VGS(th) Gate Threshold Voltage
VDS=VGS, ID=250µΑ
2.5 3.1 3.7
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
500
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=20A
TO220
VGS=10V, ID=20A
TO263
TJ=125°C
3.6 4.2
m
67
3.3 3.9 m
gFS Forward Transconductance
VDS=5V, ID=20A
55 S
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous CurrentG
0.7 1
220
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
2840
960
85
1.5
3568
1388
151
3.1
4300
1810
215
4.7
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
55 71 86 nC
Qgs Gate Source Charge
VGS=10V, VDS=20V, ID=20A
15 nC
Qgd Gate Drain Charge
23 nC
tD(on)
Turn-On DelayTime
16 ns
tr Turn-On Rise Time
VGS=10V, VDS=20V, RL=1,
30 ns
tD(off)
Turn-Off DelayTime
RGEN=3
54 ns
tf Turn-Off Fall Time
20 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
35 45 55 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
225 287 350 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C. Maximum UIS current limited by test equipment.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package is 120A.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev1: May 2011
www.aosmd.com
Page 2 of 6
Free Datasheet http://www.datasheet4u.com/


Part Number AOT1404L
Description 40V N-Channel Rugged Planar MOSFET
Maker Alpha & Omega Semiconductors
Total Page 6 Pages
PDF Download
AOT1404L pdf
Download PDF File
AOT1404L pdf
View for Mobile






Related Datasheet

1 AOT1404L 40V N-Channel Rugged Planar MOSFET Alpha & Omega Semiconductors
Alpha & Omega Semiconductors
AOT1404L pdf




Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components