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Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AOT260L Datasheet Preview

AOT260L Datasheet

60V N-Channel MOSFET

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AOT260L pdf
AOT260L/AOB260L
60V N-Channel MOSFET
General Description
The AOT(B)260L uses Trench MOSFET technology that
is uniquely optimized to provide the most efficient high
frequency switching performance. Power losses are
minimized due to an extremely low combination of
RDS(ON) and Crss.In addition, switching behavior is well
controlled with a “Schottky style” soft recovery body
diode.This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS =6V)
100% UIS Tested
100% Rg Tested
60V
140A
< 2.5m
< 2.9m
Top View
TO220
Bottom View
D
D
Top View
TO-263
D2PAK
Bottom View
D
D
D
G DS
AOT260L
S DG
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
S
G
AOB260L
Maximum
60
±20
140
110
500
20
16
128
819
330
165
1.9
1.2
-55 to 175
G
S
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
12
54
0.35
Max
15
65
0.45
G
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 1 : Jul 2011
www.aosmd.com
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/



Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AOT260L Datasheet Preview

AOT260L Datasheet

60V N-Channel MOSFET

No Preview Available !

AOT260L pdf
AOT260L/AOB260L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
ID=250µA, VGS=0V
60
V
VDS=60V, VGS=0V
TJ=55°C
1
µA
5
VDS=0V, VGS= ±20V
100 nA
VDS=VGS ID=250µA
2.2 2.7 3.2
V
VGS=10V, VDS=5V
500
A
VGS=10V, ID=20A
TO220
TJ=125°C
2 2.5
m
3.1 3.9
RDS(ON) Static Drain-Source On-Resistance
VGS=6V, ID=20A
TO220
VGS=10V, ID=20A
TO263
2.2 2.9 m
1.7 2.2 m
VGS=6V, ID=20A
TO263
gFS Forward Transconductance
VDS=5V, ID=20A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous CurrentG
1.9 2.5 m
68 S
0.65 1
V
140 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
9400
1090
32
0.5
11800
1360
40
1
14200
1770
68
1.5
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
120 150 180 nC
Qgs Gate Source Charge
VGS=10V, VDS=30V, ID=20A
28 40
52 nC
Qgd Gate Drain Charge
9 15 25 nC
tD(on)
Turn-On DelayTime
30 ns
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=30V, RL=1.5,
RGEN=3
27
74
ns
ns
tf Turn-Off Fall Time
12 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
22 32 42 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
140 200 260 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1 : Jul 2011
www.aosmd.com
Page 2 of 6
Free Datasheet http://www.datasheet4u.com/


Part Number AOT260L
Description 60V N-Channel MOSFET
Maker Alpha & Omega Semiconductors
Total Page 6 Pages
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