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Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AOTF2606L Datasheet Preview

AOTF2606L Datasheet

60V N-Channel MOSFET

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AOTF2606L pdf
AOT2606L/AOB2606L/AOTF2606L
60V N-Channel MOSFET
General Description
Product Summary
The AOT2606L & AOB2606L & AOTF2606L uses Trench
MOSFET technology that is uniquely optimized to provide
the most efficient high frequency switching performance.
Both conduction and switching power losses are
minimized due to an extremely low combination of RDS(ON),
Ciss and Coss. This device is ideal for boost converters
and synchronous rectifiers for consumer, telecom,
industrial power supplies and LED backlighting.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
TO-220
TO-220F
Top View
TO-263
D2PAK
D
60V
72A
< 6.5m(< 6.2mΩ∗)
D
AOT2606L
DS
G
AOTF2606L
S
GD
G
AOB2606L
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol AOT2606L/AOB2606L
AOTF2606L
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
±20
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
72
56
260
54
38
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS
EAS
13
10
60
180
TC=25°C
Power Dissipation B TC=100°C
PD
115
57.5
36.5
18
TA=25°C
Power Dissipation A TA=70°C
PDSM
2.1
1.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
AOT2606L/AOB2606L
15
60
1.3
AOTF2606L
15
60
4.1
* Surface mount package TO263
G
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 1 : Mar. 2012
www.aosmd.com
Page 1 of 7
Free Datasheet http://www.datasheet4u.com/



Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AOTF2606L Datasheet Preview

AOTF2606L Datasheet

60V N-Channel MOSFET

No Preview Available !

AOTF2606L pdf
AOT2606L/AOB2606L/AOTF2606L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
60
V
IDSS Zero Gate Voltage Drain Current
VDS=60V, VGS=0V
TJ=55°C
1
µA
5
IGSS Gate-Body leakage current
VDS=0V, VGS=±20V
±100 nA
VGS(th) Gate Threshold Voltage
VDS=VGSID=250µA
2.5 3
3.5 V
ID(ON)
On state drain current
VGS=10V, VDS=5V
260
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=20A
TO220/TO220F
VGS=10V, ID=20A
TO263
TJ=125°C
5.4 6.5
m
8.5 10.5
5.1 6.2 m
gFS Forward Transconductance
VDS=5V, ID=20A
75 S
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current G
0.7 1
72
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
4050
345
16.8
0.3 0.65
1.0
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
53 75 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=30V, ID=20A
22 31 nC
17 nC
Qgd Gate Drain Charge
5 nC
tD(on)
Turn-On DelayTime
18 ns
tr Turn-On Rise Time
VGS=10V, VDS=30V, RL=1.5,
20
ns
tD(off)
Turn-Off DelayTime
RGEN=3
33 ns
tf Turn-Off Fall Time
4 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
26 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
125 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1 : Mar. 2012
www.aosmd.com
Page 2 of 7
Free Datasheet http://www.datasheet4u.com/


Part Number AOTF2606L
Description 60V N-Channel MOSFET
Maker Alpha & Omega Semiconductors
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