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A1206 Datasheet Preview

A1206 Datasheet

PNP Silicon Epitaxial Planar Transistor

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A1206 pdf
2SA1206 PNP Silicon Epitaxial Planar Transistor
for general purpose amplifier and high speed switching
applications.
On special request, these transistors can be
manufactured in different pin configurations.
Features
High frequency current gain
High speed switching
Small output capacitance
Low collector saturation voltage
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current (D.C.)
Collector Current (Pulse)*
Power Dissipation
Junction Temperature
Storage Temperature Range
*PW2ms, Duty Cycle50%
Symbol
-VCBO
-VCEO
-VEBO
-IC
-IC
Ptot
Tj
TS
Value
15
15
4.5
50
100
600
150
-55 to+150
Unit
V
V
V
mA
mA
mW
OC
OC
Page 1 of 2
7/15/2011



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A1206 Datasheet Preview

A1206 Datasheet

PNP Silicon Epitaxial Planar Transistor

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A1206 pdf
Characteristics at Tamb=25 OC
Parameter
DC Current Gain*
at -VCE=1V, -IC=10mA
at -VCE=1V, -IC=1mA
Collector Cutoff Current
at -VCB=8V
Emitter Cutoff Current
at -VEB=3V
Collector Saturation Voltage*
at -IC=10mA, -IB=1mA
Base Saturation Voltage*
at -IC=10mA, -IB=1mA
Turn-on Time
See test circuit
Storage Time
See test circuit
Turn-off Time
See test circuit
Gain Bandwidth Product
at -VCE=10V, IE=10mA, f=100MHz
Output Capacitance
at -VCB=5V, f=1MHz
*Pulsed PW350μs, Duty Cycle2%
Symbol
hFE
hFE
-ICBO
-IEBO
-VCE(sat)
-VBE(sat)
ton
tstg
toff
fT
COB
Min.
50
30
-
-
-
-
-
-
-
800
-
Typ.
80
70
-
-
0.09
0.8
9
16
19
1800
2
Max.
150
-
0.1
0.1
0.2
0.95
20
40
40
-
3
Unit
-
-
μA
μA
V
V
ns
ns
ns
MHz
pF
Page 2 of 2
7/15/2011


Part Number A1206
Description PNP Silicon Epitaxial Planar Transistor
Maker BLUECOLOUR
Total Page 2 Pages
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