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BF912N60 Datasheet Preview

BF912N60 Datasheet

N-Channel MOSFET

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BF912N60 pdf
BYD Microelectronics Co., Ltd.
BF912N60/ BF912N60L
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
Features
z VDS =600 V
z ID =12A
z RDS(ON) =0.5 TYP(VGS=10V,ID=6.0A)
z Low CRSS (typical 17pF)
z Fast switching
Absolute Maximum Ratings
Symbol Parameter
VDS Drain-Source Voltage
ID Drain Current(continuous)at Tc=25°C
IDM Drain Current (pulsed)
(Note1)
VGS Gate-Source Voltage
EAS Single PulseAvalancheEnergy
(Note2)
IAR Avalanche Current
(Note1)
EAR RepetitiveAvalancheEnergy
(Note1)
dv/dt
PeakDiodeRecoverydv/dt
(Note3)
PD Power Dissipation (TC = 25°C)
Tstg Storage Temperature Range
TL Maximum Lead Temperature for Soldering Purpose
BF912N60L
BF912N60
600
12
48
±30
628
12
25 5
5.0
250 50
-55 to +150
300
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
°C
°C
Datasheet
TS-MOS-PD-0014 Rev.A/4
Page1 of 11



BYD
BYD

BF912N60 Datasheet Preview

BF912N60 Datasheet

N-Channel MOSFET

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BF912N60 pdf
BYD Microelectronics Co., Ltd.
Ordering Information
Part Number
BF912N60
BF912N60L
Package
TO-220F
TO-220
BF912N60/BF912N60L
Packaging
Tube
Tube
Thermal Data
Symbol Parameter
Rthj-case
Rthj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
TO-220F
2.5
62.5
TO-220
0.5
62.5
Unit
°C /W
°C /W
Electrical Characteristics(Tc = 25)
Symbol Parameter
Test Conditions
V(BR)DSS Drain-Source Breakdown Voltage
ID=250uA ,VGS=0V
IDSS
Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
VDS=600V,VGS=0V,Tc=125
IGSS Gate-Body Leakage Current
VGS=±30V ,VDS=0V
VGS(th)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD(*)
Trr
Gate Threshold Voltage
Static Drain-Source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Forward On Voltage
Reverse Recovery Time
VDS=VGS ,ID=250uA
VGS=10V ,ID=6.0A
VDS=25V,f=1MHZ,VGS=0V
VDD=300V, ID=6A
VGS=10V,RG=4.7Ω (Note4,5)
VDD=480V, ID=12A
VGS=10V
(Note4,5)
IF=12A ,VGS=0V
VDD=300V,IF=12A,di/dt=100A/us
(Note4)
Min.
600
2.0
Typ.
0.53
2000
164
17
40
19
136
23
45
10
20
0.85
425
Max.
10
100
±100
4.0
0.75
1.2
Unit
V
uA
uA
nA
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 8mH, IAS = 12 A, VDD = 50V, RG = 25 , Starting TJ = 25°C
3. ISD 12A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300μs, Duty cycle 2%
5. Essentially independent of operating temperature
(*).Pulsed:Pulse duration
Datasheet
TS-MOS-PD-0014 Rev.A/4
Page2 of 11


Part Number BF912N60
Description N-Channel MOSFET
Maker BYD
Total Page 11 Pages
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