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B4953 Datasheet

Dual P-Channel 30-V (D-S) MOSFET

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B4953 pdf
B4953
Dual P-Channel 30V (D-S) MOSFET
General Description
The B4953 is the Dual P-Channel logic
enhancement mode power field effect transistors
are produced using high cell density, DMOS trench
technology. This high density process is especially
tailored to minimize on-state resistance. These
devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery
powered circuits where high-side switching, and low
in-line power loss are needed in a very small outline
surface mount package.
Pin Configuration
Features
-30V/-5.3A, RDS(ON)=60m@VGS=-10V
-30V/-4.2A, RDS(ON)=90m@VGS=-4.5V
Super High Density Cell Design for
Extremely Low RDS(ON)
Exceptional On-Resistance and Maximum
DC Current Capability
SOP-8 Package
Applications
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
Absolute Maximum Ratings (TA=25 Unless Otherwise Noted):
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current(tJ=150 )
TA=25
TA=70
VDSS
VGSS
ID
-30
±20
-5.3
-4.3
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
TA=25
Maximum Power Dissipation
TA=70
IDM
IS
PD
-30
-1.7
2.0
1.3
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient*
Thermal Resistance-Junction to Case
TJ
Tstg
RθJA
RθJC
-55 to 150
-55 to 150
T 10 sec
Steady State
45
47
75
Unit
V
V
A
A
A
W
/W
/W
Confidential material for authorized user only and BiTEK
reserves the utmost right upon the information contained herein.
4
www.BiTEK.com.tw


Part Number B4953
Description Dual P-Channel 30-V (D-S) MOSFET
Maker BiTEK
Total Page 1 Pages
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