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1SS355 Datasheet Preview

1SS355 Datasheet

SILICON EPITAXIAL HIGH SPEED SWITCHING DIODE

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1SS355 pdf
1SS355
SILICON EPITAXIAL
HIGH SPEED SWITCHING DIODE
Features
Smal plastic package suitable for surface mounted
design
High Speed (Trr = 1.2 ns Typ.)
High reliability with high surge current handling
capability
RoHS compliant package
Applications
High speed switching
Description
Silicon planar zener diode in a small plastic SMD
SOD-323 package
Packing & Order Information
3,000/Reel
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless
otherwise specified.)
Parameter
Symbol
Value
Maximum Peak Reverse Voltage
VRRM
90
Maximum DC Reverse Voltage
VRM
80
Maximum Average Forward Current
IF 100
Maximum Peak Forward Voltage
IFM 255
Maximum Surge Current (1s)
IFSM
500
Maximum Junction Temperature
TJ 125
Storage temperature range
TS -55 to +175
Unit
V
V
mA
mA
mA
°C
°C
Publication Order Number: [1SS355]
© Bruckewell Technology Corporation Rev. A -2014



Bruckewell
Bruckewell

1SS355 Datasheet Preview

1SS355 Datasheet

SILICON EPITAXIAL HIGH SPEED SWITCHING DIODE

No Preview Available !

1SS355 pdf
1SS355
SILICON EPITAXIAL
HIGH SPEED SWITCHING DIODE
Electrical characteristics (Tc=25°C unless otherwise noted)
Parameter
Test Condition
Forward Voltage
IF = 100 mA
Reverse Current
VR = 80 V
Capacitance between terminals f = 1MHz ; VR = 0.5
Reverse Recovery Time
IF = 10 mA , VR = 6 V
RL = 100 Ω
Symbol
VF
IR
CT
Trr
Min.
--
--
--
--
Typ.
--
--
--
--
Max.
1.2
0.1
3.0
4.0
Unit
V
μA
pF
ns
Publication Order Number: [1SS355]
© Bruckewell Technology Corporation Rev. A -2014


Part Number 1SS355
Description SILICON EPITAXIAL HIGH SPEED SWITCHING DIODE
Maker Bruckewell
Total Page 5 Pages
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