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CDIL
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BCX18 Datasheet Preview

BCX18 Datasheet

SILICON PLANAR EPITAXIAL TRANSISTORS

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BCX18 pdf
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BCX17
BCX18
SILICON PLANAR EPITAXIAL TRANSISTORS
P–N–P transistors
Marking
BCX17 = T1
BCX18 = T2
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–emitter voltage (VBE = 0)
Collector–emitter voltage (open base)
Collector current (peak value)
Total power dissipation up to Tamb = 25 °C
Junction temperature
D.C. current gain
–IC = 100 mA; –VCE = 1 V
Transition frequency
–IC = 10 mA; –VCE = 5 V; f = 35 MHz
–VCES
–VCE0
–ICM
Ptot
Tj
BCX17
max. 50
max. 45
max.
max.
max.
BCX18
30 V
25 V
1000
mA
250 mW
150 ° C
hFE 100 to 600
fT typ.
100 MHz
Continental Device India Limited
Data Sheet
Page 1 of 4



CDIL
CDIL

BCX18 Datasheet Preview

BCX18 Datasheet

SILICON PLANAR EPITAXIAL TRANSISTORS

No Preview Available !

BCX18 pdf
BCX17
BCX18
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
BCX17
BCX18
Collector–emitter voltage (VBE = 0)
–VCES max. 50
30 V
Collector–emitter voltage
–IC = 10 mA (see Fig. 2)
–VCE0 max. 45
25 V
Emitter–base voltage (open collector)
–VEB0 max. 5
5V
Collector current (d.c.)
–I C max.
500 mA
Collector current (peak value)
–ICM max.
1000
mA
Emitter current (peak value)
IEM max.
1000
mA
Base current (d.c.)
–lB max.
100 mA
Base current (peak value)
–IBM max.
200 mA
Total power dissipation up to Tamb = 25 °C* Ptot max.
250 mW
Storage temperature
Tstg –55 to +150 ° C
Junction temperature
Tj max.
150 ° C
THERMAL RESISTANCE
From junction to ambient
Rth j–a = 500 K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Collector cut–off current
IE = 0; –VCB = 20 V
IE = 0; –VCB = 20V; Tj = 150°C
Emitter cut–off current
IC = 0; –VEB = 5V
Base–emitter voltage ·
—IC = 500 mA; –VCE = 1 V
Saturation voltage
–IC = 500 mA; –lB = 50 mA
D.C. current gain
–IC = 100 mA; –VCE = 1 V
–IC = 300 mA; –VCE = 1 V
–IC = 500 mA; –VCE = 1 V
Transition frequency at f = 35 MHz
–IC = 10 mA; –VCE = 5 V
Collector capacitance at f = 1 MHz
IE = Ie = 0; –VCB = 10 V
–ICB0 <
–ICB0 <
–IEB0 <
–VBE <
–VCEsat <
hFE
hFE >
hFE >
fT typ.
Cc typ.
100
5
10
1,2
620
100 to 600
70
40
100
8
nA
µA
µA
V
mV
MHz
pF
Continental Device India Limited
Data Sheet
Page 2 of 4


Part Number BCX18
Description SILICON PLANAR EPITAXIAL TRANSISTORS
Maker CDIL
Total Page 4 Pages
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