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CDIL
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CRD13003BC Datasheet Preview

CRD13003BC Datasheet

NPN SILICON POWER TRANSISTOR

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CRD13003BC pdf
Continental Device India Limited
www.DataSheet4U.com
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON POWER TRANSISTOR
CRD13003BC (9AC) (Tin Finish Part)
LEAD FREE
TO-126
Plastic Package
ECB
Applications
Suitable for Lighting, Switching Regulator and Motor Control
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter (sus) Voltage
Emitter Base Voltage
Collector Current Continuous
Peak
Base Current Continuous
Peak
Emitter Current Continuous
Peak
Power Dissipation at Ta=25ºC
Derate Above 25ºC
Power Dissipation at Tc=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
*ICM
IB
*IBM
IE
*IEM
PD
PD
Tj, Tstg
VALUE
700
400
9.0
1.5
3.0
0.75
1.5
2.25
4.5
1.4
11.2
45
360
- 65 to+150
THERMAL RESISTANCE
Junction to Case
Junction to Ambient
Maximum Lead Temperature for
Soldering
Purpose: 1/8" from Case for 5 Seconds
Rth (j-c)
Rth (j-a)
TL
2.77
89
275
*Pulse Test: Pulse Width=5ms, Duty Cycle=10%
CRD13003BC(9AC)Rev120705E
UNIT
V
V
V
A
A
A
A
A
A
W
mW/ ºC
W
mW/ ºC
ºC
ºC/W
ºC/W
ºC
Continental Device India Limited
Data Sheet
Page 1 of 5



CDIL
CDIL

CRD13003BC Datasheet Preview

CRD13003BC Datasheet

NPN SILICON POWER TRANSISTOR

No Preview Available !

CRD13003BC pdf
NPN SILICON POWER TRANSISTOR
www.DataSheet4U.com
CRD13003BC (9AC) (Tin Finish Part)
LEAD FREE
TO-126
Plastic Package
ECB
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN TYP MAX
Collector Base Voltage
Collector Emitter (sus) Voltage
Collector Cut Off Current
Emitter Cut Off Current
VCBO
IC=1mA, IE=0
700 -
-
**VCEO (sus)
IC=10mA, IB=0
400 -
-
ICBO
VCB=700V, IE=0
- - 1.0
VCB=700V, IE=0, Tc=100ºC
5.0
IEBO
VEB=9V, IC=0
- - 1.0
DC Current Gain
**hFE
IC=0.5A, VCE=5V
15 - 22
IC=2A, VCE=5V
4.0 - 25
Collector Emitter Saturation Voltage
**VCE (sat)
IC=0.5A, IB=0.1A
- - 0.5
IC=1A, IB=0.25A
- - 1.0
IC=1.5A, IB=0.5A
- - 2.5
IC=1A, IB=0.25A,Tc=100ºC -
- 1.0
Base Emitter Saturation Voltage
**VBE (sat)
IC=0.5A, IB=0.1A
- - 1.0
IC=1A, IB=0.25A
- - 1.2
IC=1A, IB=0.25A, Tc=100ºC -
- 1.1
DYNAMIC CHARACTERISTICS
DESCRIPTION
Current Gain Bandwidth Product
Output Capacitance
SYMBOL
fT
Cob
TEST CONDITION
IC=100mA, VCE=10V,
f=1MHz
VCB=10V, f=0.1MHz
MIN TYP MAX
4.0 -
-
- 21 -
SWITCHING TIME
DESCRIPTION
Turn on Time
Fall Time
Storage Time
SYMBOL
ton
tf
tstg
TEST CONDITION
VCC=125V
IB1=0.2A, IB2=0.2A
IC=1A
MIN TYP MAX
- - 1.1
- - 0.7
- - 4.0
MARKING
C = CDIL Logo
P = Plant Code, N for Delhi
X = Year of Manufacturer
YY = Week Code
**Pulse Test:- PW=300µs, Duty Cycle=2%
CRD13003BC(9AC)Rev120705E
For Lead Free Lead Finish
CRD1
3003
BC
PXYY
'T' stands for Tin finish leads
UNIT
V
V
mA
mA
mA
V
V
V
V
V
V
V
UNIT
MHz
pF
UNIT
µs
µs
µs
Continental Device India Limited
Data Sheet
Page 2 of 5


Part Number CRD13003BC
Description NPN SILICON POWER TRANSISTOR
Maker CDIL
Total Page 5 Pages
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