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NE321000 Datasheet Preview

NE321000 Datasheet

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

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ULTRA LOW NOISE
PSEUDOMORPHIC HJ FET
NE321000
FEATURES
• SUPER LOW NOISE FIGURE:
0.35 dB Typ at f = 12 GHz
• HIGH ASSOCIATED GAIN:
13.0 dB Typ at f = 12 GHz
• GATE LENGTH: 0.2 µm
• GATE WIDTH: 160 µm
DESCRIPTION
NEC's NE321000 is a Hetero-Junction FET chip that utilizes
the junction between Si-doped AlGaAs and undoped InGaAs
to create high electron mobility. Its excellent low noise figure
and high associated gain make it suitable for commercial,
industrial and space applications.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
NOISE FIGURE & ASSOCIATED GAIN vs.
DRAIN CURRENT
VDS = 2 V
f = 12 GHz
GA
15
14
13
2.0 12
1.5 11
1.0
0.5
NF
0 10 20 30
Drain Current, ID (mA)
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
NE321000
CHIP
SYMBOLS
NF
GA1
PARAMETERS AND CONDITIONS
Noise Figure, VDS = 2 V, ID = 10 mA, f = 12 GHz
Associated Gain, VDS = 2 V, ID = 10 mA, f = 12 GHz
UNITS
MIN
TYP MAX
dB 0.35 0.45
dB 12.0
13.5
IDSS Saturated Drain Current, VDS = 2 V, VGS = 0 V
mA 15 40 70
VP Pinch-off Voltage, VDS = 2 V, ID = 100 µA
V -0.2 -0.7 -2.0
gM Transconductance, VDS = 2 V, ID = 10 µA
mS 40
55
IGSO
Gate to Source Leakage Current, VGS = -3 V
µA
0.5 10
Note:
1. RF performance is determined by packaging and testing 10 samples per wafer. Wafer rejection criteria for standard devices is 2 rejects per
10 samples.
California Eastern Laboratories



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NE321000 Datasheet Preview

NE321000 Datasheet

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

No Preview Available !

NE321000 pdf
NE321000
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
VDS
VGS
IDS
IG
PT2
TCH
TSTG
PARAMETERS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
UNITS
V
V
mA
µA
mW
°C
°C
RATINGS
4.0
-3.0
IDSS
100
200
175
-65 to +175
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Chip mounted on Alumina heat sink.
RECOMMENDED
OPERATING CONDITIONS (TA = 25°C)
PART NUMBER
NE321000
SYMBOLS
PARAMETERS
UNITS MIN TYP MAX
VDS Drain to Source Voltage
V 1 23
ID Drain Current
mA 5 10 15
PIN Input Power
dBm – – 0
TYPICAL PERFORMANCE CURVES (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
250
200
150
100
50
0 50 100 150 200 250
Ambient Temperature, TA (°C)
MAXIMUM AVAILABLE GAIN,
FORWARD INSERTION GAIN vs.
DRAIN CURRENT
24
VDS = 2 V
20
MSG.
ID = 10 mA
16
12
(S21S)2
8
4
1 2 4 6 8 10 14 20 30
Frequency, f (GHz)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
80
60
VGS = 0 V
40
-0.2 V
20
-0.4 V
-0.6 V
0 1.0 2.0
Drain to Source Voltage, VDS (V)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
VDS = 2 V
60
40
20
0
-2.0
-1.0
Gate to Source Voltage, VGS (V)
0


Part Number NE321000
Description ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
Maker CEL
Total Page 6 Pages
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