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NESG2021M05 Datasheet Preview

NESG2021M05 Datasheet

NPN SiGe HIGH FREQUENCY TRANSISTOR

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NESG2021M05 pdf
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DATA SHEET
NEC's NPN SiGe
HIGH FREQUENCY TRANSISTOR
NESG2021M05
FEATURES
HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY
VCEO = 5 V (Absolute Maximum)
LOW NOISE FIGURE:
NF = 0.9 dB at 2 GHz
NF = 1.3 dB at 5.2 GHz
• HIGH MAXIMUM STABLE GAIN:
MSG = 22.5 dB at 2 GHz
LOW PROFILE M05 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
Pb Free
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
M05
DESCRIPTION
NEC's NESG2021M05 is fabricated using NECʼs high voltage
Silicon Germanium process (UHS2-HV), and is designed for
a wide range of applications including low noise amplifiers,
medium power amplifiers, and oscillators.
NECʼs low profile, flat lead style M05 Package provides high
frequency performance for compact wireless designs.
NESG2021M05
M05
SYMBOLS
NF
Ga
NF
Ga
MSG
|S21E|2
P1dB
OIP3
fT
Cre
ICBO
IEBO
hFE
PARAMETERS AND CONDITIONS
UNITS
Noise Figure at VCE = 2 V, IC = 3 mA, f = 5.2 GHz,
ZS = ZSOPT, ZL = ZLOPT
Associated Gain at VCE = 2 V, IC = 3 mA, f = 5.2 GHz,
ZS = ZSOPT, ZL = ZLOPT
Noise Figure at VCE = 2 V, IC = 3 mA, f = 2 GHz,
ZS = ZSOPT, ZL = ZLOPT
Associated Gain at VCE = 2 V, IC = 3 mA, f = 2 GHz,
ZS = ZSOPT, ZL = ZLOPT
Maximum Stable Gain1 at VCE = 3 V, IC = 10 mA, f = 2 GHz
Insertion Power Gain at VCE = 3 V, IC = 10 mA, f = 2 GHz
Output Power at 1dB Compression Point at
VCE = 3 V, IC = 12 mA, f = 2 GHz
Output 3rd Order Intercept Point at VCE = 3 V, IC = 12 mA, f = 2 GHz
Gain Bandwidth Product at VCE = 3 V, IC = 10 mA, f = 2 GHz
Reverse Transfer Capacitance2 at VCB = 2 V, IC = 0 mA, f = 1 GHz
Collector Cutoff Current at VCB = 5V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
DC Current Gain3 at VCE = 2 V, IC = 5 mA
dB
dB
dB
dB
dB
dB
dBm
dBm
GHz
pF
nA
nA
MIN
15.0
20.0
17.0
20
130
TYP
1.3
10.0
0.9
18.0
22.5
19.0
9.0
17.0
25
0.1
190
MAX
1.2
0.2
100
100
260
Notes:
1. MSG = S21
S12
2. Collector to base capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to
the guard pin.
3. Pulsed measurement, pulse width 350 μs, duty cycle 2 %.
California Eastern Laboratories



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NESG2021M05 Datasheet Preview

NESG2021M05 Datasheet

NPN SiGe HIGH FREQUENCY TRANSISTOR

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NESG2021M05 pdf
NESG2021M05
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VCBO Collector to Base Voltage
V
13.0
VCEO Collector to Emitter Voltage V
5.0
VEBO Emitter to Base Voltage
V
1.5
IC Collector Current
mA 35
PT2 Total Power Dissipation
mW
175
TJ Junction Temperature
°C 150
TSTG Storage Temperature
°C -65 to +150
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Mounted on 1.08 cm2 x 1.0 mm (t) glass epoxy PCB.
THERMAL RESISTANCE
SYMBOLS
PARAMETERS
UNITS
Rth j-c Junction to Case Resistance °C/W
RATINGS
TBD
ORDERING INFORMATION
PART NUMBER QUANTITY
SUPPLYING FORM
NESG2021M05-T1-A 3 kpcs/reel • Pb Free
• Pin 3 (Collector), Pin 4
(Emitter) face the perforation
side of the tape
• 8 mm wide embossed taping
TYPICAL PERFORMANCE CURVES (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
250
M(1o.0u8ntcemd2o×n
Glass Epoxy
1.0 mm (t) )
PCB
200
175
150
100
50
0 25 50 75 100 125 150
Ambient Temperature, TA (°C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 1 V
10
1
0.1
0.01
0.001
0.0001
0.4
0.5 0.6 0.7 0.8 0.9
Base to Emitter Voltage, VBE (V)
1.0
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0.3
f = 1 MHz
0.2
0.1
0 2 4 6 8 10
Collector to Base Voltage, VCB (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 2 V
10
1
0.1
0.01
0.001
0.0001
0.4
0.5 0.6 0.7 0.8 0.9 1.0
Base to Emitter Voltage, VBE (V)


Part Number NESG2021M05
Description NPN SiGe HIGH FREQUENCY TRANSISTOR
Maker CEL
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