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NESG270034 Datasheet Preview

NESG270034 Datasheet

NPN SiGe RF TRANSISTOR

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NESG270034 pdf
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NPN SILICON GERMANIUM RF TRANSISTOR
NESG270034
NPN SiGe RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (2 W)
3-PIN POWER MINIMOLD (34 PKG)
FEATURES
• This product is suitable for medium output power (2 W) amplification
Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz
Pout = 31.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 900 MHz
• Using UHS2-HV process (SiGe technology), VCBO (ABSOLUTE MAXIMUM RATINGS) = 25 V
• 3-pin power minimold (34 PKG)
ORDERING INFORMATION
Part Number
NESG270034
Order Number
NESG270034-AZ
Package
Quantity
Supplying Form
3-pin power minimold 25 pcs
(34 PKG) (Pb-Free) Note1, (Non reel)
2
• Magazine case
NESG270034-T1 NESG270034-T1-AZ
1 kpcs/reel • 12 mm wide embossed taping
• Pin 2 (Emitter) face the perforation side of the tape
Notes 1. Contains Lead in the part except the electrode terminals.
2. With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact
your nearby sales office.
Remark To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Symbol
Ratings
Collector to Base Voltage
VCBO
25
Collector to Emitter Voltage
VCEO
9.2
Emitter to Base Voltage
VEBO
2.8
Collector Current
Total Power Dissipation
IC
Ptot Note
750
1.9
Junction Temperature
Storage Temperature
Tj 150
Tstg 65 to +150
Note Mounted on 34.2 cm2 × 0.8 mm (t) glass epoxy PWB
Unit
V
V
V
mA
W
°C
°C
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PU10577EJ01V0DS (1st edition)
Date Published September 2005 CP(K)
© NEC Compound Semiconductor Devices, Ltd. 2005



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NESG270034 Datasheet Preview

NESG270034 Datasheet

NPN SiGe RF TRANSISTOR

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NESG270034 pdf
THERMAL RESISTANCE (TA = +25°C)
Parameter
Termal Resistance from Junction to
Ambient Note
Symbol
Rthj-a
Ratings
65
Note Mounted on 34.2 cm2 × 0.8 mm (t) glass epoxy PWB
Unit
°C/W
RECOMMENDED OPERATING RANGE (TA = +25°C)
Parameter
Collector to Emitter Voltage
Collector Current
Input Power Note
Symbol
VCE
IC
Pin
MIN.
TYP.
6.0
600
20
MAX.
7.2
750
23
Unit
V
mA
dBm
Note Input power under conditions of VCE 6.0 V, f = 460 MHz
NESG270034
2 Preliminary Data Sheet PU10577EJ01V0DS


Part Number NESG270034
Description NPN SiGe RF TRANSISTOR
Maker CEL
Total Page 11 Pages
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