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NESG3031M14 Datasheet Preview

NESG3031M14 Datasheet

NPN SiGe HIGH FREQUENCY TRANSISTOR

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NESG3031M14 pdf
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DATASHEET
NEC's NPN SiGe
HIGH FREQUENCY TRANSISTOR
NESG3031M14
FEATURES
• THE DEVICE IS AN IDEAL CHOICE FOR LOW NOISE,
HIGH-GAIN AMPLIFICATION:
NF = 0.95 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz
NF = 1.1 dB TYP., Ga = 9.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz
• MAXIMUM STABLE POWER GAIN:
MSG = 15.0 dB TYP. @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz
• SiGe HBT TECHNOLOGY (UHS3) ADOPTED:
fmax = 110 GHz
• M14 PACKAGE:
4-pin lead-less minimold package
M14 Package
ORDERING INFORMATION
PART NUMBER
NESG3031M14-A
NESG3031M14-T3-A
QUANTITY
50 pcs (Non reel)
10 kpcs/reel
SUPPLYING FORM
• 8 mm wide embossed taping
• Pin 1 (Collector), Pin 4 (Emitter) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25ºC)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot Note
Tj
Tstg
RATINGS
12.0
4.3
1.5
35
150
150
65 to +150
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PWB
UNIT
V
V
V
mA
mW
°C
°C
Caution
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
California Eastern Laboratories
1



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NESG3031M14 Datasheet Preview

NESG3031M14 Datasheet

NPN SiGe HIGH FREQUENCY TRANSISTOR

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NESG3031M14 pdf
NESG3031M14
ELECTRICAL CHARACTERISTICS (TA = +25ºC)
PARAMETER
DC Characteristics
SYMBOL
TEST CONDITIONS
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
ICBO
IEBO
hFE Note 1
VCB = 5 V, IE = 0 mA
VEB = 1 V, IC = 0 mA
VCE = 2 V, IC = 6 mA
Insertion Power Gain
Noise Figure (1)
Noise Figure (2)
Associated Gain (1)
Associated Gain (2)
Reverse Transfer Capacitance
Maximum Stable Power Gain
Gain 1 dB Compression Output Power
3rd Order Intermodulation Distortion
Output Intercept Point
| S21e |2
NF
NF
Ga
Ga
Cre Note 2
MSGNote 3
PO (1 dB)
OIP3
VCE = 3 V, IC = 20 mA, f = 5.8 GHz
VCE = 2 V, IC = 6 mA, f = 5.2 GHz,
ZS = ZSopt, ZL = ZLopt
VCE = 2 V, IC = 6 mA, f = 5.8 GHz,
ZS = ZSopt, ZL = ZLopt
VCE = 2 V, IC = 6 mA, f = 5.2 GHz,
ZS = ZSopt, ZL = ZLopt
VCE = 2 V, IC = 6 mA, f = 5.8 GHz,
ZS = ZSopt, ZL = ZLopt
VCB = 2 V, IE = 0 mA, f = 1 MHz
VCE = 3 V, IC = 20 mA, f = 5.8 GHz
VCE = 3 V, IC (set) = 20 mA,
f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt
VCE = 3 V, IC (set) = 20 mA,
f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt
Notes 1. Pulse measurement: PW 350 μs, Duty Cycle 2%
2. Collector to base capacitance when the emitter grounded
3. MSG = S21
S12
MIN.
TYP. MAX. UNIT
− − 100
− − 100
220 300 380
nA
nA
6.5 9.0
0.95
dB
dB
1.1 1.5 dB
10.0
dB
7.5 9.5 dB
0.15 0.25
pF
12.0 15.0
dB
13.0 dBm
18.0 dBm
hFE CLASSIFICATION
RANK
Marking
hFE Value
FB
zJ
220 to 380
2


Part Number NESG3031M14
Description NPN SiGe HIGH FREQUENCY TRANSISTOR
Maker CEL
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