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UPC2711TB Datasheet Preview

UPC2711TB Datasheet

SILICON MMIC WIDEBAND AMPLIFIER

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UPC2711TB pdf
BIPOLAR ANALOG INTEGRATED CIRCUITS
UPC2711TB, UPC2712TB
5 V, SUPER MINIMOLD
SILICON MMIC WIDEBAND AMPLIFIER
FEATURES
• HIGH DENSITY SURFACE MOUNTING:
6 pin super minimold or SOT- 363 package
• SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V
• WIDEBAND RESPONSE:
UPC2711TB: fu = 2.9 GHz TYP
UPC2712TB: fu = 2.6 GHz TYP
• POWER GAIN:
UPC2711TB: GP = 13 dB TYP
UPC2712TB: GP = 20 dB TYP
DESCRIPTION
The UPC2711TB and UPC2712TB are Silicon MMIC
Wideband Amplifiers manufactured using NEC's 20 GHz fT
NESATTM III silicon bipolar process. These devices are de-
signed for use as buffer amps in DBS tuners. The UPC2711/
12TB are pin compatible and have comparable performance
as the larger UPC2711/12T, so they are suitable for use as a
replacement to help reduce system size. These IC's are
housed in a 6 pin super minimold or SOT-363 package.
Stringent quality assurance and test procedure ensure
the highest reliability and performance.
TYPICAL PERFORMANCE CURVES
GAIN vs. FREQUENCY
25
UPC2712TB
20
15 UPC2711TB
10
5
0.5 1.0 1.5 2.0 2.5
3.0
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS (TA = +25 °C, VCC = 5.0 V, ZL = ZS = 50 W)
SYMBOLS
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
ICC Circuit Current (no signal)
GP Power Gain, f = 1 GHz
fU
ΔGP
PO(SAT)
Upper Limit Operating Frequency
(The gain at fU is 3 dB down from the gain at 100 MHz)
Gain Flatness, f = 0.1 GHz to 2.5 GHz
Maximum Output Level, f = 1 GHz, PIN = 0 dBm
NF Noise Figure, f = 1 GHz
RLIN
Input Return Loss, f = 1 GHz
RLOUT Output Return Loss, f = 1 GHz
ISOL
Isolation, f = 1 GHz
UNITS
mA
dB
GHz
dB
dBm
dB
dB
dB
dB
UPC2711TB
S06
MIN TYP MAX
9 12 15
11 13 16.5
2.7 2.9
±0.8
-2 +1
5 6.5
20 25
9 12
25 30
UPC2712TB
S06
MIN TYP MAX
9 12 15
18 20 23.5
2.2 2.6
±0.8
0 +3
4.5
9 12
10 13
28 33
6
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
Date Published: June 22, 2005



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UPC2711TB Datasheet Preview

UPC2711TB Datasheet

SILICON MMIC WIDEBAND AMPLIFIER

No Preview Available !

UPC2711TB pdf
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VCC Supply Voltage
V6
PIN Input Power
dBm
+10
PT Total Power Dissipation2
mW
200
TOP Operating Temperature
°C -45 to +85
TSTG Storage Temperature
°C -55 to +150
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Mounted on double sided copper clad 50 x 50 x 1.6 mm epoxy
glass PWB (TA = +85°C).
UPC2711TB, UPC2712TB
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
UNITS MIN TYP MAX
VCC Supply Voltage
V 4.5 5.0 5.5
TOP Operating Temperature ˚C -40 +25 +85
PIN DESCRIPTION
Pin Pin
No. Name
1 Input
Applied
Voltage
(V)
4 Output
6 VCC 4.5 to 5.5
2 GND 0
3
5
Description
Internal Equivalent Circuit
Signal input pin. An internal matching
circuit, configured with resistors, enables
50 connection over a wide bandwidth.
A multi-feedback circuit is designed to
cancel the deviations of hFE and resistance.
This pin must be coupled to the signal source
with a blocking capacitor.
Signal output pin. An internal matching
circuit, configured with resistors, enables
50 connection over a wide bandwidth.
This pin must be coupled to the output
load with a blocking capacitor.
Power supply pin. This pin should be
externally equipped with a bypass capacitor
to minimize ground impedance.
Ground pin. This pin should be connected
to system ground with minimum inductance.
Ground pattern on the board should be
formed as wide as possible. All the ground
pins must be connected together with wide
ground pattern to minimize impedance
difference.
1
6
4
2
3
5


Part Number UPC2711TB
Description SILICON MMIC WIDEBAND AMPLIFIER
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Total Page 9 Pages
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