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CEH2321 Datasheet Preview

CEH2321 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

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CEH2321 pdf
CEH2321
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-20V, -4.8A, RDS(ON) = 55m@VGS = -4.5V.
RDS(ON) = 80m@VGS = -2.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
TSOP-6 package.
4
5
6
3
2
1
TSOP-6
G(3)
D(1,2,5,6,)
S(4)
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS -20
VGS ±12
ID -4.8
IDM -19.2
Maximum Power Dissipation
PD 2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
62.5
Units
V
V
A
A
W
C
Units
C/W
2005.June
http://www.cetsemi.com
1



CET
CET

CEH2321 Datasheet Preview

CEH2321 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CEH2321 pdf
CEH2321
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = -250µA
VDS = -16V, VGS = 0V
VGS = 12V, VDS = 0V
VGS = -12V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics d
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = -250µA
VGS = -4.5V, ID = -4.5A
VGS = -2.5V, ID = -3.6A
VDS = -5V, ID = -4.5A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
Crss
VDS = -10V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -10V, ID = -1A,
VGS = -4.5V, RGEN = 6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -10V, ID = -4.5A,
VGS = -4.5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = -1.3A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 5 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
Min
-20
-0.6
Typ
45
65
11
1490
252
192
15
10
68
31
13.5
3
4
Max Units
-1
100
-100
V
µA
nA
nA
-1.5 V
55 m
80 m
S
pF
pF
pF
21 ns
16 ns
105 ns
47 ns
19 nC
nC
nC
-1.3 A
-1.2 V
7
2


Part Number CEH2321
Description P-Channel Enhancement Mode Field Effect Transistor
Maker CET
Total Page 4 Pages
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