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Champion Microelectronic
Champion Microelectronic

CMS-S040-020 Datasheet Preview

CMS-S040-020 Datasheet

SCHOTTKY BARRIER DIODE

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CMS-S040-020
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts
* Guard ring protection
* Low reverse leakage current
A
B
Electrical Characteristics
Chip size(A):
1.016 * 1.016 mm2
Bond Pad
size(B) :
0.889 * 0.889 mm2
Thickness :
300µm ± 20µm
Metalization : Anode Ti/Ni/Ag
Metalization : Cathode Ti/Ni/Ag
Sym.
Spec. Limit
Unit
Maximum Instantaneous Forward Volt
at IF : 1.0Amp. 25°C
VF max
0.43
Volt
Minimum Instantaneous Reverse Voltage
at IR : 200 uA 25°C
VR min.
23
Minimum Non-repetitive Peak Surge current at 25°C
IFSM
40
Storage Temperature
TSTG
-65 to +125
Volt.
Amp
°C
HsinChu Headquarter
5F, No. 11, Park Avenue II,
Science-Based Industrial Park,
HsinChu City, Taiwan
TEL: +886-3-567 9979
FAX: +886-3-567 9909
Sales & Marketing
11F, No. 306-3, SEC. 1, Ta Tung Road,
Hsichih, Taipei Hsien 221, Taiwan
TEL: +886-2-8692 1591
FAX: +886-2-8692 1596
2002/04/24 Rev. 1
Champion Microelectronic Corporation
Page 1


Part Number CMS-S040-020
Description SCHOTTKY BARRIER DIODE
Maker Champion Microelectronic
Total Page 1 Pages
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