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Chino-Excel Technology
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CEM3032 Datasheet Preview

CEM3032 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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CEM3032 pdf
CEM3032
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
30V, 18A, RDS(ON) = 4.8m@VGS = 10V.
RDS(ON) = 6.8m@VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
DD D D
8 7 65
SO-8
1
1 234
S SSG
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 30
VGS ±20
Drain Current-Continuous
Drain Current-Pulsed a
ID 18
IDM 72
Maximum Power Dissipation
PD 2.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
50
Units
V
V
A
A
W
C
Units
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 2. 2010.Sep
http://www.cet-mos.com



Chino-Excel Technology
Chino-Excel Technology

CEM3032 Datasheet Preview

CEM3032 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CEM3032 pdf
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics c
Symbol
Test Condition
BVDSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
VGS = 0V, ID = 250µA
VDS = 25V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VGS = VDS, ID = 250µA
VGS = 10V, ID = 18A
VGS = 4.5V, ID = 14.4A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 15V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
td(on)
tr
td(off)
tf
VDD = 15V, ID = 14.4A,
VGS = 4.5V,
RGEN = 1.8
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 15V, ID = 14.4A,
VGS = 4.5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 14.4A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
CEM3032
Min Typ Max Units
30 V
1 µA
100 nA
-100 nA
1 3V
3.8 4.8 m
5.2 6.8 m
4205
905
560
pF
pF
pF
37 74 ns
37 74 ns
60 120 ns
34 78 ns
60 78 nC
13 nC
25 nC
2.5 A
1V
2


Part Number CEM3032
Description N-Channel Enhancement Mode Field Effect Transistor
Maker Chino-Excel Technology
Total Page 4 Pages
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