http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf





Chino-Excel Technology
Chino-Excel Technology

CEM6056 Datasheet Preview

CEM6056 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CEM6056 pdf
CEM6056
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 15A, RDS(ON) = 7.5 m@VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
Surface mount Package.
DD D D
8 7 65
SO-8
1
1 234
S SSG
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 60
VGS ±20
Drain Current-Continuous
Drain Current-Pulsed a
ID 15
IDM 60
Maximum Power Dissipation
PD 2.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
50
Units
V
V
A
A
W
C
Units
C/W
Details are subject to change without notice .
1
Rev 1. 2010.May
http://www.cet-mos.com



Chino-Excel Technology
Chino-Excel Technology

CEM6056 Datasheet Preview

CEM6056 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CEM6056 pdf
CEM6056
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics c
Symbol
Test Condition
BVDSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VGS = VDS, ID = 250µA
VGS = 10V, ID = 15A
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
gFS
Ciss
Coss
Crss
VDS = 5V, ID = 2.6A
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 30V, ID = 15A,
VGS = 10V, RGEN = 3.6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 48V, ID =15A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 2A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
Min
60
2
Typ Max Units
1
100
-100
V
µA
nA
nA
4V
6.2 7.5 m
10
3205
390
215
S
pF
pF
pF
27 54 ns
14 28 ns
60 120 ns
17 34 ns
75 97.5 nC
12 nC
28 nC
2A
1.2 V
2


Part Number CEM6056
Description N-Channel Enhancement Mode Field Effect Transistor
Maker Chino-Excel Technology
Total Page 4 Pages
PDF Download
CEM6056 pdf
Download PDF File
[partsNo] view html
View PDF for Mobile






Related Datasheet

1 CEM6056 N-Channel Enhancement Mode Field Effect Transistor Chino-Excel Technology
Chino-Excel Technology
CEM6056 pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components