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CMD5N60 Datasheet Preview

CMD5N60 Datasheet

600V N-Channel MOSFET

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CMD5N60 pdf
CMD5N60/CMU5N60
General Description
600V N-Channel MOSFET
Product Summery
The 5N60 have been fabricated using an
advanced high voltage MOSFET process
that is designed to deliver high levels of
performance and robustness in popular
AC-DC applications.
Features
BVDSS
600V
RDSON
2.5
Applications
Power Supply
PFC
Ballast
ID
4.5A
4.5A, 600V, RDS (on) = 2.5 Ω
@VGS = 10 V
100% Avalanche Tested
TO252 / TO251 Pin Configuration
Improved dv/dt capability
GDS
TO252
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed a
Gate-Source Voltage
Single Pulsed Avalanche Energy b
Avalanche Current a
Repetitive Avalanche Energy a
dv/dt
Peak Diode Recovery dv/dt c
G D S TO251
Value
600
4.5
2.6
13.5
± 30
220
4.5
4.9
4.5
PD Power Dissipation (TC = 25°C)
54
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8from case for 5 seconds
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case Max.
Thermal Resistance, Junction-to-Ambient Max.
Value
2.56
110
Units
°C/W
°C/W
1



Cmos
Cmos

CMD5N60 Datasheet Preview

CMD5N60 Datasheet

600V N-Channel MOSFET

No Preview Available !

CMD5N60 pdf
CMD5N60/CMU5N60
sElectrical Characteristic
TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
600V N-Channel MOSFET
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
600 -- -- V
ID = 250 µA, Referenced to 25°C --
0.6
--
V/°C
IDSS
IGSSF
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC =125°C
VGS = 30 V, VDS = 0 V
-- --
1
-- -- 10 µA
-- -- 100 nA
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
-- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 2.25A
VDS = 40 V, ID = 2.25A d
2.0 --
4.0
-- -- 2.5
-- 4.7 --
V
Ω
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V
VGS = 0 V
f = 1.0 MHz
-- 490 --
-- 55
--
-- 10
--
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 300 V
ID = 4.5A
RG = 25Ω
VDS = 480 V
ID = 4.5A
VGS = 10 V
-- 15
--
ns
d,e
-- 42
--
ns
-- 55
--
ns
-- 26
--
ns
-- 15
--
nC
d,e
-- 2.8
--
nC
-- 7 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 4.5A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 4.5A
dI /dt = 100 A/µs
d
Notes:
a. Repetitive RatingPulse width limited by maximum junction temperature
b. L = 18.9mH, IAS = 4.5 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25
c. ISD ≤ 4.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ= 25°C
d. Pulse TestPulse width ≤ 300 µs, Duty cycle ≤ 2%
e. Essentially independent of operating temperature
-- -- 4.5 A
-- -- 13.5 A
-- -- 1.4 V
-- 300
--
ns
-- 2.2
--
µC
2


Part Number CMD5N60
Description 600V N-Channel MOSFET
Maker Cmos
Total Page 2 Pages
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