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Cypress Semiconductor Electronic Components Datasheet

CY62147G Datasheet

4-Mbit (256K words x 16 bit) Static RAM

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CY62147G pdf
PRELIMINARY
CY62147G, CY621472G
CY62147GE MoBL®
4-Mbit (256K words × 16 bit) Static RAM with
Error-Correcting Code (ECC)
16-Mbit (1 M words × 16 bit / 2 M words × 8 bit) Static RAM with Error-Correcting Code (ECC)
Features
High speed: 45 ns/55 ns
Ultra-low standby power
Typical standby current: 3.5 A
Maximum standby current: 8.7 A
Embedded ECC for single-bit error correction[1]
Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V
1.0-V data retention
TTL-compatible inputs and outputs
Error indication (ERR) pin to indicate 1-bit error detection and
correction
Pb-free 48-ball VFBGA and 44-pin TSOP II packages
Functional Description
CY62147G and CY62147GE are high-performance CMOS
low-power (MoBL) SRAM devices with embedded ECC. Both
devices are offered in single and dual chip enable options and in
multiple pin configurations. The CY62147GE device includes an
ERR pin that signals an error-detection and correction event
during a read cycle.
Devices with a single chip enable input are accessed by
asserting the chip enable (CE) input LOW. Dual chip enable
devices are accessed by asserting both chip enable inputs – CE1
as low and CE2 as HIGH.
Data writes are performed by asserting the Write Enable (WE)
input LOW, while providing the data on I/O0 through I/O15 and
address on A0 through A17 pins. The Byte High Enable (BHE)
and Byte Low Enable (BLE) inputs control write operations to the
upper and lower bytes of the specified memory location. BHE
controls I/O8 through I/O15 and BLE controls I/O0 through I/O7.
Data reads are performed by asserting the Output Enable (OE)
input and providing the required address on the address lines.
Read data is accessible on the I/O lines (I/O0 through I/O15).
Byte accesses can be performed by asserting the required byte
enable signal (BHE or BLE) to read either the upper byte or the
lower byte of data from the specified address location.
All I/Os (I/O0 through I/O15) are placed in a HI-Z state when the
device is deselected (CE HIGH for a single chip enable device
and CE1 HIGH/CE2 LOW for a dual chip enable device), or
control signals are deasserted (OE, BLE, BHE).
The device also has a unique Byte Power down feature, where,
if both the Byte Enables (BHE and BLE) are disabled, the
devices seamlessly switch to standby mode irrespective of the
state of the chip enables, thereby saving power.
On the CY62147GE devices, the detection and correction of a
single-bit error in the accessed location is indicated by the
assertion of the ERR output (ERR = HIGH)[1]. See the Truth
Table – CY62147G/CY62147GE on page 16 for a complete
description of read and write modes.
The logic block diagrams are on page 2.
Note
1. This device does not support automatic write-back on error detection.
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-92847 Rev. *D
• San Jose, CA 95134-1709 • 408-943-2600
Revised April 3, 2015


Cypress Semiconductor Electronic Components Datasheet

CY62147G Datasheet

4-Mbit (256K words x 16 bit) Static RAM

No Preview Available !

CY62147G pdf
PRELIMINARY
Logic Block Diagram – CY62147G
ECC ENCODER
INPUT BUFFER
A0
A1
A2
A3
A4
A5
MEMORY
ARRAY
A6
A7
A8
A9
COLUMN DECODER
Logic Block Diagram – CY62147GE
ECC ENCODER
INPUT BUFFER
A0
A1
A2
A3
A4
A5
MEMORY
ARRAY
A6
A7
A8
A9
COLUMN DECODER
Document Number: 001-92847 Rev. *D
CY62147G, CY621472G
CY62147GE MoBL®
I/O0I/O7
I/O8I/O15
BHE
WE
OE
BLE
CE2
CE1
ERR
I/O0I/O7
I/O8I/O15
BHE
WE
OE
BLE
CE2
CE1
Page 2 of 21


Part Number CY62147G
Description 4-Mbit (256K words x 16 bit) Static RAM
Maker Cypress Semiconductor
Total Page 21 Pages
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