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Cystech Electonics
Cystech Electonics

BAT54CN3 Datasheet Preview

BAT54CN3 Datasheet

Small Signal Schottky diodes

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BAT54CN3 pdf
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CYStech Electronics Corp.
Small Signal Schottky (double) diodes
BAT54N3/BAT54AN3
BAT54CN3/BAT54SN3
Spec. No. : C302N3-H
Issued Date : 2003.04.14
Revised Date :
Page No. : 1/4
Description
Planar silicon Schottky barrier diodes encapsulated in a SOT-23 small plastic SMD package.
Single diodes and double diodes with different pinning are available.
Features
Very small conduction losses
Low forward voltage drop
Small plastic SMD package
Applications
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes
Pinning
Pin
BAT54
1A
2 NC
3K
Description
BAT54A BAT54C
K1 A1
K2 A2
A1,A2
K1,K2
BAT54S
A1
K2
K1,A1
Outline
SOT-23
3
33
1
(1) BAT54
3
2
N.C.
1
(2)BAT54A
3
1 21
(3)BAT54C
(4)BAT54S
Diode configuration and symbol
2
2
BAT54N3/BAT54AN3/BAT54CN3/BAT54SN3
12
Marking:
Type
BAT54 N3
BAT54AN3
BAT54CN3
BAT54SN3
Marking Code
L4
L42
L43
L44
CYStek Product Specification



Cystech Electonics
Cystech Electonics

BAT54CN3 Datasheet Preview

BAT54CN3 Datasheet

Small Signal Schottky diodes

No Preview Available !

BAT54CN3 pdf
www.datasheet4u.com
CYStech Electronics Corp.
Spec. No. : C302N3-H
Issued Date : 2003.04.14
Revised Date :
Page No. : 2/4
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature Tstg ................................................................................................... -65~+150 °C
Junction Temperature Tj .............................................................................................................. +125°C
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) Ptot (Note) ......................................................................... 230 mW
Maximum Voltages and Currents (Ta=25°C)
Repetitive Peak Reverse Voltage VRRM .............................................................................................. 30 V
Continuous Forward Current IF ................................................................................................... 200 mA
Repetitive Peak Forward Current(tp1s,duty cycle0.5)………………………………………… 300mA
Non-repetitive Peak Forward Current (tp<10ms, sinusoidal) IFSM ............................................... 600 mA
Note:for double diodes, Ptot is the total power dissipation of both diodes.
Characteristics (Ta=25°C)
Characteristic
Reverse Breakdown Voltage
Forward Voltage (Note 1)
Reverse Leakage Current (Note 2)
Diode Capacitance
Reverse Recovery Time
Symbol
VBR
VF(1)
VF(2)
VF(3)
VF(4)
VF(5)
IR
CD
trr
Condition
IR=100µA
IF=0.1mA
IF=1mA
IF=10mA
IF=30mA
IF=100mA
VR=25V,Tj=25
VR=1V, f=1MHz
IF=IR=10mA RL=100
measured at IR=1mA
Notes: 1.pulse test, tp=380µs,duty cycle<2%.
2.pulse test, tp=5ms,duty cycle<2%.
Min. Max. Unit
30 - V
- 240 mV
- 320 mV
- 400 mV
- 500 mV
- 800 mV
- 2 µA
- 10 pF
- 5 ns
BAT54N3/BAT54AN3/BAT54CN3/BAT54SN3
CYStek Product Specification


Part Number BAT54CN3
Description Small Signal Schottky diodes
Maker Cystech Electonics
Total Page 4 Pages
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