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Cystech Electonics
Cystech Electonics

BTB1412J3 Datasheet Preview

BTB1412J3 Datasheet

Low Vcesat PNP Epitaxial Planar Transistor

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BTB1412J3 pdf
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CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
BTB1412J3
Features
Low VCE(sat), VCE(sat)=-0.6 V (typical), at IC / IB = -4A / -0.1A
Excellent DC current gain characteristics
Complementary to BTD2118J3
Spec. No. : C816J3
Issued Date : 2003.05.15
Revised Date : 2004.07.02
Page No. : 1/4
Symbol
BTB1412J3
Outline
TO-252
BBase
CCollector
EEmitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Note : *1. Single Pulse Pw=10ms
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(Pulse)
Pd(TA=25)
Pd(TC=25)
Tj
Tstg
BTB1412J3
Limits
-20
-15
-6
-5
-10
1
10
150
-55~+150
*1
Unit
V
V
V
A
W
°C
°C
CYStek Product Specification



Cystech Electonics
Cystech Electonics

BTB1412J3 Datasheet Preview

BTB1412J3 Datasheet

Low Vcesat PNP Epitaxial Planar Transistor

No Preview Available !

BTB1412J3 pdf
www.DataSheet4U.com
CYStech Electronics Corp.
Spec. No. : C816J3
Issued Date : 2003.05.15
Revised Date : 2004.07.02
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Cob
Min.
-20
-15
-6
-
-
-
120
-
-
Typ.
-
-
-
-
-
-
-
120
60
Classification Of hFE
Max.
-
-
-
-0.5
-0.5
-1.0
560
-
-
Unit
V
V
V
µA
µA
V
-
MHz
pF
Test Conditions
IC=-50µA, IE=0
IC=-1mA, IB=0
IE=-50µA, IC=0
VCB=-15V, IE=0
VEB=-5V, IC=0
IC=-4A, IB=-0.1A
VCE=-2V, IC=-0.5A
VCE=-6V, IC=-50mA, f=30MHz
VCB=-20V, f=1MHz
*Pulse Test : Pulse Width 380µs, Duty Cycle2%
Rank
Range
Q
120~270
R
180~390
S
270~560
BTB1412J3
CYStek Product Specification


Part Number BTB1412J3
Description Low Vcesat PNP Epitaxial Planar Transistor
Maker Cystech Electonics
Total Page 4 Pages
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