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Cystech Electonics
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BTB1424AM3 Datasheet Preview

BTB1424AM3 Datasheet

Low VCE(sat) PNP Epitaxial Planar Transistor

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CYStech Electronics Corp.
Low VCE(sat) PNP Epitaxial Planar Transistor
BTB1424AM3
Spec. No. : C817M3A
Issued Date : 2003.10.05
Revised Date :2005.10.04
Page No. : 1/5
Features
Excellent DC current gain characteristics
Low Saturation Voltage, VCE(sat)=-0.3V(typ) @IC=-2A, IB=-100mA.
Complementary to BTD2150AM3
Pb-free package
Symbol
BTB1424AM3
Outline
SOT-89
BBase
CCollector
EEmitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulsed) (Note 1)
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
Tj
Tstg
Note 1: Single pulse, Pw10ms, Duty Cycle30%.
BCE
Limits
-50
-50
-6
-3
-5
600
150
-55~+150
Unit
V
V
V
A
mW
°C
°C
BTB1424AM3
CYStek Product Specification



Cystech Electonics
Cystech Electonics

BTB1424AM3 Datasheet Preview

BTB1424AM3 Datasheet

Low VCE(sat) PNP Epitaxial Planar Transistor

No Preview Available !

BTB1424AM3 pdf
www.DataSheet4U.com
CYStech Electronics Corp.
Spec. No. : C817M3A
Issued Date : 2003.10.05
Revised Date :2005.10.04
Page No. : 2/5
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*hFE
fT
Cob
Min.
-50
-50
-6
-
-
-
-
82
-
-
Typ.
-
-
-
-
-
-
-
-
240
35
Classification Of hFE
Max.
-
-
-
-0.1
-0.1
-0.4
-0.5
560
-
-
Unit
V
V
V
µA
µA
V
V
-
MHz
pF
Test Conditions
IC=-50µA
IC=-1mA
IE=-50µA
VCB=-20V
VEB=-5V
IC=-1A, IB=-50mA
IC=-2A, IB=-100mA
VCE=-2V, IC=-500mA
VCE=-2V, IC=-500mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width 380µs, Duty Cycle2%
Rank
P
Q
R
S
hFE range
82~180 120~270 180~390 270~560
Ordering Information
Device
BTB1424AM3
Package
SOT-89
(Pb-free)
Shipping
1000 pcs / Tape & Reel
Marking
AE
BTB1424AM3
CYStek Product Specification


Part Number BTB1424AM3
Description Low VCE(sat) PNP Epitaxial Planar Transistor
Maker Cystech Electonics
Total Page 5 Pages
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