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DG12N65 Datasheet Preview

DG12N65 Datasheet

N-CHANNEL ENHANCEMENT MODE MOSFET

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DG12N65 pdf
DG12N65
N 沟道增强型场效应晶体管
N-CHANNEL ENHANCEMENT MODE MOSFET
版本号:V1.0
产品概述 General Description
DG12N65N沟道增强型场效应晶体管,应用了东光微电的相关专利技术,采用自对准平
面工艺及先进的终端耐压技术,降低了导通损耗,提高了开关特性,增强了雪崩耐量。该
产品能应用于多种功率开关电路,使得电源能效更高,系统更加小型化。
DG12N65 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s
proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve
switching performance and enhance the avalanche energy. The transistor can be used in various power switching
circuit for higher efficiency and system miniaturization.
主要参数 MAIN CHARACTERISTICS
VDSS
ID
RDS(ON)
Crss
650
12
0.8
23
V
A
pF
符号 Symbol
封装 Package
1 /8



DGME
DGME

DG12N65 Datasheet Preview

DG12N65 Datasheet

N-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

DG12N65 pdf
绝对最大额定值 ABSOLUTE MAXIMUM RATINGS (Tc=25)
参数名称
Parameter
漏极-源极直流电压
Drain-Source Voltage
连续漏极电流
Continues Drain Current
符号
Symbol
VDSS
Tc=25
ID
Tc=100
最大脉冲漏极电流 (1)
Plused Drain Current (note1)
最高栅源电压
Gate-to-Source Voltage
单脉冲雪崩能量 (2)
Single Pulsed Avalanche Energy (note2)
雪崩电流 (1)
Avalanche Current (note1)
重复雪崩能量 (1)
Repetitive Avalanche Energy (note1)
二极管反向恢复最大电压变化速率 (3)
Peak Diode Recovery (note3)
耗散功率
Power Dissipation
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
Tc=25
TO-220
TO-220F
耗散功率减额因子
Power Dissipation Derating Factor
AboPvDe(D2F5)
TO-220
TO-220F
最高结温及存储温度
Operating and Storage Temperature Range
引线最高焊接温度
Maximum Temperature for Soldering
TJTSTG
TL
数值
Value
650
12*
7.2*
48
±30
600
10
20
4.5
240
50
2.0
0.4
150-55+150
300
单位
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
W/
热特性 THERMAL CHARACTERIASTIC
参数名称
Parameter
符号
Symbol
结到管壳的热阻
Thermal ResistanceJunction to Case
Rth(j-c)
TO-220/TO-262
TO-220F
最大
Max
0.52
2.5
单位
Unit
W
结到环境的热阻
Thermal ResistanceJunction to Ambient
Rth(j-A)
TO-220
TO-220F
62.5
62.5
W/
* 漏极电流由最高结温限制
* Drain current limited by maximum junction temperature
2 /8


Part Number DG12N65
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Maker DGME
Total Page 8 Pages
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