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2SD882S Datasheet

NPN EPITAXIAL PLANAR TRANSISTOR

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2SD882S pdf
DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
2SD882S
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in output stage of 0.75W audio
amplifier, voltage regulator, DC-DC converter and
relay driver.
TO-92
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating
40
30
5
3
750
+150
-55 to +150
Unit
V
V
V
A
mW
oC
oC
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70) Min
2o Typ
2o Typ
(1.0.2570)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5oTyp. 5oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Collector-Base Breakdown Volatge
BVCBO
40
Collector-Emitter Breakdown Voltage
BVCEO
30
Emitter-Base Breakdown Volatge
BVEBO
5
Collector Cutoff Current
ICBO
-
Emitter Cutoff Current
Collector-Emitter Saturation Voltage(1)
Base-Emitter Saturation Voltage(1)
IEBO
VCE(sat)
VBE(sat)
-
-
-
DC Current Gain(1)
hFE1
hFE2
30
100
Transition Frequency
fT -
Output Capacitance
Cob -
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
-
-
-
-
-
-
-
-
-
90
45
Classification of hFE2
Rank
Q
P
Range
100~200
160~320
E
250~500
Max Unit
Test Conditions
- V IC=100µA
- V IC=1mA
- V IE=10µA
1 µA VCB=30V
1 µA VEB=3V
0.5 V IC=2A, IB=0.2A
2 V IC=2A, IB=0.2A
- - IC=20mA, VCE=2V
500 - IC=1A, VCE=2V
- MHz IC=0.1A, VCE=5V
- pF IE=0, VCB=10V, f=1MHz


Part Number 2SD882S
Description NPN EPITAXIAL PLANAR TRANSISTOR
Maker Dc Components
Total Page 1 Pages
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