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DC8050S Datasheet Preview

DC8050S Datasheet

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

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DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
DC8050S
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose amplifier applications.
Pinning
1 = Emitter
2 = Base
3 = Collector
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol Rating
Collector-Base Voltage
VCBO
25
Collector-Emitter Voltage
VCEO
20
Emitter-Base Voltage
VEBO
5
Collector Current
IC 700
Total Power Dissipation
PD 625
Junction Temperature
TJ +150
Storage Temperature
TSTG -55 to +150
Unit
V
V
V
mA
mW
oC
oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
2o Typ
2o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5oTyp. 5oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Collector-Base Breakdown Volatge
BVCBO 25
-
Collector-Emitter Breakdown Voltage BVCEO 20
-
Emitter-Base Breakdown Volatge
BVEBO
5
-
Collector Cutoff Current
ICBO
-
-
Emitter Cutoff Current
Collector-Emitter Saturation Voltage(1)
Base-Emitter On Voltage(1)
IEBO
VCE(sat)
VBE(on)
-
-
-
-
-
-
DC Current Gain(1)
hFE1
hFE2
85
-
-
170
Transition Frequency
fT 150
-
Output Capacitance
Cob -
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Max
-
-
-
1
0.1
0.6
1
500
-
-
10
Unit
V
V
V
µA
µA
V
V
-
-
MHz
pF
Test Conditions
IC=10µA
IC=1mA
IE=10µA
VCB=20V
VEB=6V
IC=0.5A, IB=50mA
IC=150mA, VCE=1V
IC=150mA, VCE=1V
IC=500mA, VCE=1V
IC=20mA, VCE=10V, f=100MHz
VCB=10V, f=1MHz
Classification of hFE1
Rank
B
C
Range
85~160
100~200
D
150~300
E
250~500



Dc Components
Dc Components

DC8050S Datasheet Preview

DC8050S Datasheet

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

No Preview Available !

DC8050S pdf
RATING AND CHARACTERISTIC CURVES OF DC8050S
FIG.1 - Current Gain & Collector Current
1000
FIG.2 - Saturation Voltage & Collector Current
1
VCE=1V
100
10
1
0.001
0.01
0.1 1 10
Collector Current (mA)
100
1000
0.1
VCE(sat) @ IC=10IB
0.01
0.01
0.1 1 10 100
Collector Current (mA)
1000
FIG.3 - On Voltage & Collector Current
1
VBE(ON) @ VCE=1V
FIG.4 - Cutoff Frequency & Collector Current
1000
VCE=10V
100
10
0.1
0.01
0.1 1 10 100
Collector Current (mA)
1000
1
1 10 100 1000
Collector Current (mA)
FIG.5 - Capacitance & Reverse-Biased Voltage
100
10 Cob
1
0.1
1 10
Reverse-Biased Voltage (V)
100
700
600
500
400
300
200
100
0
0
FIG.6 - PD-Ta
20 40 60 80 100 120 140 160
Ambient Temperature-Ta( oC)
DC COMPONENTS CO., LTD.
R


Part Number DC8050S
Description TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Maker Dc Components
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