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I882 Datasheet

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

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DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
I882
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in output stage of 10W audio
amplifier, voltage regulator, DC-DC converter,
and relay driver.
Pinning
1 = Base
2 = Collector
3 = Emitter
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol Rating
Collector-Base Voltage
VCBO
40
Collector-Emitter Voltage
VCEO
30
Emitter-Base Voltage
VEBO
5
Collector Current (DC)
IC 3
Collector Current (pulse)
IC 7
Base Current (DC)
Total Power Dissipation(TC=25oC)
IB
PD
600
10
Junction Temperature
TJ +150
Storage Temperature
TSTG -55 to +150
Unit
V
V
V
A
A
mA
W
oC
oC
TO-251
.268(6.80)
.252(6.40)
.217(5.50)
.205(5.20)
.022(0.55)
.018(0.45)
.284(7.20)
.268(6.80)
2
.063(1.60)
.055(1.40)
123
.035 Max
(0.90)
.256
(6.50)
Min
.032
(0.80)
Max
.181 Typ
(4.60)
.059(1.50)
.035(0.90)
.024(0.60)
.018(0.45)
.095(2.40)
.087(2.20)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min Typ Max
Collector-Base Breakdown Voltage
BVCBO 40
-
-
Collector-Emitter Breakdown Voltage
BVCEO 30
-
-
Emitter-Base Breakdown Voltage
BVEBO
5
-
-
Collector Cutoff Current
ICBO
-
-
1
Emitter Cutoff Current
Collector-Emitter Saturation Voltage(1)
Base-Emitter Saturation Voltage(1)
IEBO
VCE(sat)
VBE(sat)
-
-
-
-1
0.3 0.5
12
DC Current Gain(1)
hFE1
30
-
-
hFE2 100 - 500
Transition Frequency
fT - 90 -
Output Capacitance
Cob - 45 -
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Classification of hFE2
Rank
Range
Q
100~200
P
160~320
E
250~500
Unit
V
V
V
µA
µA
V
V
-
-
MHz
pF
Test Conditions
IC=100µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCB=30V, IE=0
VEB=3V, IC=0
IC=2A, IB=0.2A
IC=2A, IB=0.2A
IC=20mA, VCE=2V
IC=1A, VCE=2V
IC=0.1A, VCE=5V, f=100MHz
VCB=10V, f=1MHz


Part Number I882
Description TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Maker Dc Components
Total Page 1 Pages
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