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Din-Tek
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DTU1N60 Datasheet Preview

DTU1N60 Datasheet

Power MOSFET

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DTU1N60 pdf
DTL1N60/DTP1N60/DTU1N60
Power MOSFET
www.din-tek.jp
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
600
VGS = 10 V
14
2.7
8.1
Single
7
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
TO-220AB
GD S
Top View
DPAK
(TO-252)
D
GS
IPAK
(TO-251)
D
GD S
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM5.6
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
Peak Diode Recovery dV/dtc
TC = 25 °C
TA = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 37 mH, Rg = 25 Ω, IAS = 1.4 A (see fig. 12).
c. ISD 1.4 A, dI/dt 40 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
LIMIT
600
± 20
1.4
0.89
0.28
0.020
93
1.4
3.6
36
2.5
3.8
- 55 to + 150
260d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
1
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Din-Tek
Din-Tek

DTU1N60 Datasheet Preview

DTU1N60 Datasheet

Power MOSFET

No Preview Available !

DTU1N60 pdf
DTL1N60/DTP1N60/DTU1N60
www.din-tek.jp
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
MIN.
-
-
-
TYP.
-
-
-
MAX.
110
50
3.5
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 1.2 Ab
VDS = 50 V, ID = 1.2 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Internal Source Inductance
Drain-Source Body Diode Characteristics
LS
VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 1.4 A, VDS = 360 V,
see fig. 6 and 13b
VDD = 300 V, ID = 1.4 A,
Rg = 18 Ω, RD = 135 Ω, see fig. 10b
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
S
MIN.
600
-
2.0
-
-
-
-
1.4
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
- -V
0.88 - V/°C
- 4.0 V
- ± 100 nA
- 100
μA
- 500
- 7.0 Ω
- -S
229 -
42 - pF
2.6 -
- 14
- 2.7 nC
- 8.1
10 -
13 -
ns
30 -
25 -
4.5 -
nH
7.5 -
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM p - n junction diode
D - - 2.0
G
S
A
- - 8.0
Body Diode Voltage
VSD
TJ = 25 °C, IS = 1.4 A, VGS = 0 Vb
- - 1.6 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
- 290 580 ns
TJ = 25 °C, IF = 1.4 A, dI/dt = 100 A/μsb
Qrr
-
0.67 1.3
μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
2
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Part Number DTU1N60
Description Power MOSFET
Maker Din-Tek
Total Page 12 Pages
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