| Description | N-Channel 20-V (D-S) MOSFET DTU0N0 www.din-tek.jp PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 0.0061 at VGS = 4.5 V 20 0.0084 at VGS = 2.5 V ID (A)a 60 30 TO-252 GDS Top View D R G S FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • 100 % Rg Tested • 100 % UIS Tested • Typical ESD Protection 4000 V APPLICATIONS • OR-ing RoHS COMPLIANT ABSOLUTE MAXIMUM RATINGS TA = 25 °C,... |
| Features |
• TrenchFET® Power MOSFET • 175 °C Junction Temperature • 100 % Rg Tested • 100 % UIS Tested • Typical ESD Protection 4000 V APPLICATIONS • OR-ing RoHS COMPLIANT ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC... |
| Datasheet |
 DTU60N02 Datasheet - 445.30KB |
