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Diodes Semiconductor Electronic Components Datasheet

ZXGD3111N8TC Datasheet

200V ACTIVE OR-ING MOSFET CONTROLLER

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ZXGD3111N8TC pdf
ZXGD3111N8
200V ACTIVE OR-ING MOSFET CONTROLLER IN SO8
Description
ZXGD3111N8 is a 200V Active OR-ing MOSFET controller designed
for driving a very low RDS(ON) Power MOSFET as an ideal diode. This
replaces the standard rectifier to reduce the forward voltage drop and
overall increase the power transfer efficiency.
The ZXGD3111N8 can be used on both high-side and low-side power
supply units (PSU) with rails up to ±200V. It enables very low RDS(ON)
MOSFETs to operate as ideal diodes as the turn-off threshold is
only -3mV with ±2mV tolerance. In the typical 48V configuration, the
standby power consumption is <50mW as the low quiescent supply
current is <1mA. During PSU fault condition, the OR-ing Controller
detects the power reduction and rapidly turns off the MOSFET in
<600ns to block reverse current flow and avoid the common bus
voltage dropping.
Features
Active OR-ing MOSFET Controller for High- or Low-Side PSU
Ideal Diode to Reduce Forward Voltage Drop
-3mV Typical Turn-Off Threshold with ±2mV Tolerance
200V Drain Voltage Rating
25V VCC Rating
<50mW Standby Power with Quiescent Supply Current <1mA
<600ns Turn-Off Time to Minimize Reverse Current
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony free. “Green” Device (Note 3)
Applications
Active OR-ing Controller in:
(N + 1) Redundant Power Supplies
Telecom and Networking
Data Centers and Servers
Mechanical Data
Case: SO-8
Case material: Molded Plastic. “Green” Molding Compound
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
-ve Rail
Typical Configuration for
Low-Side -ve Supply Rail
VD VS
-ve Vout
DRAIN
VG
GATE GND
ZXGD3111
Vcc
C1
GND Rail
GND
SO-8
Top View
GND
GND
GND
Vcc
GATE
GATE
Top View
Pin-Out
NC
DRAIN
PGND
PGND
Pin Name
GND
VCC
GATE
PGND
DRAIN
NC
Pin Function
Ground
Power Supply
Gate Drive
Power Ground
Drain Sense
Not Connected
Internally
Ordering Information (Note 4)
Product
ZXGD3111N8TC
Marking
ZXGD 3111
Reel size (inches)
13
Tape width (mm)
12
Quantity per reel
2,500
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free,
"Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
ZXGD3111N8
Document Number DS37304 Rev. 1 - 2
ZXGD
3111
YY WW
ZXGD
3111
YY
WW
= Product Type Marking Code, Line 1
= Product Type Marking Code, Line 2
= Year (ex: 15 = 2015)
= Week (01 - 53)
1 of 10
www.diodes.com
September 2015
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

ZXGD3111N8TC Datasheet

200V ACTIVE OR-ING MOSFET CONTROLLER

No Preview Available !

ZXGD3111N8TC pdf
ZXGD3111N8
Absolute Maximum Ratings (Voltage relative to GND, @ TA = +25°C, unless otherwise specified.)
Characteristic
Supply Voltage
Drain Pin Voltage
Gate Output Voltage
Gate Driver Peak Source Current
Gate Driver Peak Sink Current
Symbol
VCC
VD
VG
ISOURCE
ISINK
Value
25
-3 to 200
-3 to VCC + 3
2
5
Thermal Characteristics (@ TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
(Note 5)
Power Dissipation
Linear Derating Factor
(Note 6)
(Note 7)
PD
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Note 8)
(Note 5)
(Note 6)
(Note 7)
(Note 8)
(Note 9)
RθJA
RθJL
TJ, TSTG
Value
490
3.92
655
5.24
720
5.76
785
6.28
255
191
173
159
135
-50 to +150
Unit
V
V
V
A
A
Unit
mW
mW/°C
°C/W
°C/W
°C
ESD Ratings (Note 10)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
Notes:
5. For a device surface mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the
device is measured when operating in a steady-state condition.
6. Same as Note 5, except pin 3 (Vcc) and pins 5 & 6 (PGND) are both connected to separate 5mm x 5mm 1oz copper heat-sinks.
7. Same as Note 6, except both heat-sinks are 10mm x 10mm.
8. Same as Note 6, except both heat-sinks are 15mm x 15mm.
9. Thermal resistance from junction to solder-point at the end of each lead on pins 2 & 3 (GND) and pins 5 & 6 (VCC).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A11
Thermal Derating Curve
0.8
0.7 15mm x 15mm
0.6 10mm x 10mm
0.5
0.4
0.3
Minimum
Layout
0.2
5mm x 5mm
0.1
0.0
0
20 40 60 80 100 120 140 160
Junction Temperature (°C)
Derating Curve
ZXGD3111N8
Document Number DS37304 Rev. 1 - 2
2 of 10
www.diodes.com
September 2015
© Diodes Incorporated


Part Number ZXGD3111N8TC
Description 200V ACTIVE OR-ING MOSFET CONTROLLER
Manufacturer Diodes
Total Page 10 Pages
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