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Diodes Semiconductor Electronic Components Datasheet

MBR10100CT Datasheet

(MBR1070CT - MBR10100CT) HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

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MBR10100CT pdf
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MBR1070CT - MBR10100CT
10A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
Features
· Schottky Barrier Chip
· Guard Ring Die Construction for
Transient Protection
· Low Power Loss, High Efficiency
· High Surge Capability
· High Current Capability and Low Forward
Voltage Drop
· For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
· Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
· Case: Molded Plastic
· Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
· Polarity: As Marked on Body
· Weight: 2.24 grams (approx)
· Mounting Position: Any
· Marking: Type Number
B
C
K
D
L
M
A
12 3
E
JN
G
HH
Pin 1
Pin 2
Pin 3
P
Case
TO-220AB
Dim Min Max
A 14.22 15.88
B 9.65 10.67
C 2.54 3.43
D 5.84 6.86
E ¾ 6.35
G 12.70 14.73
H 2.29 2.79
J 0.51 1.14
K 3.53Æ 4.09Æ
L 3.56 4.83
M 1.14 1.40
N 0.30 0.64
P 2.03 2.92
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@ TC = 100°C
Non-Repetitive Peak Forward Surge Current
8.3ms single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage Drop
@ IF = 5.0A, TC =
@ IF = 5.0A, TC =
@ IF = 10A, TC =
@ IF = 10A, TC =
125°C
25°C
125°C
25°C
Peak Reverse Current
at Rated DC Blocking Voltage
@ TC = 25°C
@ TC = 125°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Case (Note 1)
Voltage Rate of Change
Operating and Storage Temperature Range
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
VFM
IRM
Cj
RqJC
dV/dt
Tj, TSTG
MBR
1070CT
70
49
MBR
1080CT
MBR
1090CT
80 90
56 63
10
120
0.75
0.85
0.85
0.95
0.1
50
300
3.0
10,000
-65 to +150
MBR
10100CT
100
70
Unit
V
V
A
A
V
mA
pF
K/W
V/ms
°C
Notes: 1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
DS30028 Rev. A-2
1 of 2
MBR1070CT-MBR10100CT


Diodes Semiconductor Electronic Components Datasheet

MBR10100CT Datasheet

(MBR1070CT - MBR10100CT) HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

No Preview Available !

MBR10100CT pdf
10
8
6
4
2
0
0
300
50 100
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
150
250
200
150
100
50
0
1 10 100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
100
10
1.0
0.1
0
0.2 0.4
Tj - 25°C
IF Pulse Width = 300µs
2% Duty Cycle
0.6 0.8 1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
4000
Tj = 25°C
f = 1.0MHz
1000
100
0.1
1.0 10
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
100
DS30028 Rev. A-2
2 of 2
MBR1070CT-MBR10100CT


Part Number MBR10100CT
Description (MBR1070CT - MBR10100CT) HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
Maker Diodes Incorporated
Total Page 2 Pages
PDF Download
MBR10100CT pdf
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