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Dynex Semiconductor
Dynex Semiconductor

DIM400DDS17-A000 Datasheet Preview

DIM400DDS17-A000 Datasheet

Dual Switch IGBT Module

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DIM400DDS17-A000 pdf
FEATURES
10µs Short Circuit Withstand
Non Punch Through Silicon
Isolated Copper Baseplate
Lead Free construction
APPLICATIONS
High Power Inverters
Motor Controllers
DIM400DDS17-A000
Dual Switch IGBT Module
DS5859-1.0 June 2005 (LN24024)
KEY PARAMETERS
VCES
VCE
*
(sat)
IC
IC(PK)
(typ)
(max)
(max)
1700V
2.7V
400A
800A
*(measured at the power busbars and not the auxiliary terminals)
The Powerline range of high power modules
includes half bridge, chopper, dual, single and bi-
directional switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The DIM400DDS17-A000 is a dual switch 1700V, n
channel enhancement mode, insulated gate bipolar
transistor (IGBT) module. The IGBT has a wide
reverse bias safe operating area (RBSOA) plus full
10µs short circuit withstand.
The module incorporates an electrically isolated
base plate and low inductance construction enabling
circuit designers to optimise circuit layouts and
utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM400DDS17-A000
Note: When ordering, please use the whole part number.
.
Fig. 1 Dual switch circuit diagram
Outline type code: D
(See package details for further information)
Fig. 2 Electrical connections (not to scale)
www.DataSheet4U.com
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/9



Dynex Semiconductor
Dynex Semiconductor

DIM400DDS17-A000 Datasheet Preview

DIM400DDS17-A000 Datasheet

Dual Switch IGBT Module

No Preview Available !

DIM400DDS17-A000 pdf
SEMICONDUCTOR
DIM400DDS17-A000
ABSOLUTE MAXIMUM RATINGS – PER ARM
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device.
In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the
package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings
may affect device reliability.
Tcase = 25° C unless stated otherwise
Symbol
Parameter
Test Conditions
Max. Units
VCES
VGES
IC
IC(PK)
Pmax
I2t
Visol
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I2t value
Isolation voltage – per module
VGE = 0V
Tcase = 75° C
1ms, Tcase =110° C
Tcase = 25° C, Tj = 150° C
VR = 0, tP = 10ms, Tvj = 125° C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
1700
±20
400
800
3470
30
4000
V
V
A
A
W
kA2S
V
www.DataSheet4U.com
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
2/9


Part Number DIM400DDS17-A000
Description Dual Switch IGBT Module
Maker Dynex Semiconductor
Total Page 9 Pages
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DIM400DDS17-A000 pdf
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