http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf





EIC
EIC

1SS184 Datasheet Preview

1SS184 Datasheet

SILICON EPITAXIAL PLANAR DIODE

No Preview Available !

1SS184 pdf
Certificate TH97/10561QM
Certificate TW00/17276EM
1SS184
PRV : 85 Volts
Io : 100 mA
FEATURES :
* Small package
* Low forward voltage
* Fast reverse recovery time
* Small total capacitance
* Ultra high speed switching application
* Pb / RoHS Free
SILICON EPITAXIAL
PLANAR DIODE
SOT-23
0.19
0.08
1.40
0.95
0.50
0.35
0.100
0.013
3.10
2.70
3
1
2
2.04
1.78
1.02
0.89
3
MECHANICAL DATA :
* Case : SOT-23 plastic Case
* Marking Code : B3
12
Dimensions in millimeters
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (Ta =25 °C)
Parameter
Maximum Peak Reverse Voltage
Reverse Voltage
Maximum Peak Forward Current
Average Forward Current
Surge Current (10 ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VRM
VR
IFM
IF(AV)
IFSM
Ptot
TJ
TSTG
Value
85
80
300
100
2
150
125
-55 to +125
Unit
V
V
mA
mA
A
mW
°C
°C
ELECTRICAL CHARACTERISTICS (Ta =25 °C)
Parameter
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
Test Condition
IF = 1 mA
IF = 10 mA
IF = 100 mA
VR = 30 V
VR = 80 V
VR = 0 V, f = 1 MHz
IR = 10 mA
Symbol
VF
IR
CT
Trr
Min.
-
-
-
-
-
-
-
TYP
0.6
0.72
0.9
-
-
0.9
1.6
Max.
-
-
1.2
0.1
0.5
3
4
Unit
V
µA
pF
ns
Page 1 of 2
Rev. 01 : September 20, 2006



EIC
EIC

1SS184 Datasheet Preview

1SS184 Datasheet

SILICON EPITAXIAL PLANAR DIODE

No Preview Available !

1SS184 pdf
Certificate TH97/10561QM
Certificate TW00/17276EM
RATINGS AND CHARACTERISTIC CURVES ( 1SS184 )
FIG.1 - FORWARD CURRENT VS.
FORWARD VOLTAGE
200
100
10 Ta = 100 °C
1
Ta = 25 °C
0.1
0.01
0
0.2 0.4 0.6 0.8
FORWARD VOLTAGE, (V)
1.0
FIG.3 - TOTAL CAPACITANCE VS.
REVERSE VOLTAGE
1.2
f = 1 MHz
1.0 Ta = 25 °C
0.8
0.6
0.4
0.2
0
0.1
1.0 10
REVERSE VOLTAGE, (V)
100
FIG.2 - REVERSE CURRENT VS.
REVERSE VOLTAGE
10
1.0
0.1
0.01
Ta = 100 °C
Ta = 25 °C
0.001
0
20 40 60 80
REVERSE VOLTAGE, (V)
100
FIG.4 - REVERSE RECOVERY TIME VS.
FORWARD CURRENT
100
Ta = 25 °C
10
1
0.1
0.1
1.0 10
FORWARD CURRENT, (mA)
100
Page 2 of 2
Rev. 01 : September 20, 2006


Part Number 1SS184
Description SILICON EPITAXIAL PLANAR DIODE
Maker EIC
Total Page 2 Pages
PDF Download
1SS184 pdf
Download PDF File
1SS184 pdf
View for Mobile



Buy Electronic Components




Related Datasheet

1 1SS181 SILICON EPITAXIAL PLANAR DIODE Toshiba Semiconductor
Toshiba Semiconductor
1SS181 pdf
2 1SS181 SWITCHING DIODE JCET
JCET
1SS181 pdf
3 1SS181 Ultra High Speed Switching Diode WILLAS
WILLAS
1SS181 pdf
4 1SS181 High Speed Switching Diodes MCC
MCC
1SS181 pdf
5 1SS181 SWITCHING DIODE RECTRON
RECTRON
1SS181 pdf
6 1SS181 Surface Mount Switching Diodes WEITRON
WEITRON
1SS181 pdf
7 1SS181 DIODE WEJ
WEJ
1SS181 pdf
8 1SS181 SILICON EPITAXIAL PLANAR DIODE SEMTECH
SEMTECH
1SS181 pdf
9 1SS181 ULTRA HIGH SPEED SWITCHING DIODE Kexin
Kexin
1SS181 pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components